SiC wafer ká áljẹbrà
Silicon carbide (SiC) wafers ti di sobusitireti yiyan fun agbara-giga, igbohunsafẹfẹ giga, ati ẹrọ itanna iwọn otutu giga kọja ọkọ ayọkẹlẹ, agbara isọdọtun, ati awọn apa afẹfẹ. Portfolio wa ni wiwa awọn polytypes bọtini ati awọn eto doping-nitrogen-doped 4H (4H-N), idabobo ologbele-mimọ giga (HPSI), nitrogen-doped 3C (3C-N), ati p-type 4H / 6H (4H / 6H-P) - ti a funni ni awọn onidiwọn didara mẹta: PRIME tabi didan ti o ni kikun MMY, ẹrọ didan, awọn idanwo ilana), ati Iwadi (awọn ipele apọju aṣa ati awọn profaili doping fun R&D). Awọn iwọn ila opin wafer wa ni iwọn 2 ″, 4″, 6″, 8″, ati 12″ lati ba awọn irinṣẹ pataki mejeeji ati awọn fabs to ti ni ilọsiwaju ba. A tun pese awọn boules monocrystalline ati awọn kirisita irugbin ti o ni iṣalaye ni deede lati ṣe atilẹyin idagbasoke gara inu ile.
Wafers 4H-N ṣe ẹya awọn iwuwo gbigbe lati 1 × 10¹⁶ si 1 × 10¹⁹ cm⁻³ ati awọn resistance ti 0.01–10 Ω·cm, jiṣẹ iṣipopada elekitironi ti o dara julọ ati awọn aaye didenukole loke 2 MV/cm — bojumu fun awọn diodes Schottky, ati awọn MOFETs. Awọn sobusitireti HPSI kọja 1×10¹² Ω·cm resistivity pẹlu awọn iwuwo micropipe ni isalẹ 0.1 cm⁻², ni idaniloju jijo kekere fun RF ati awọn ẹrọ makirowefu. Cubic 3C-N, ti o wa ni awọn ọna kika 2 ″ ati 4 ″, ngbanilaaye heteroepitaxy lori ohun alumọni ati ṣe atilẹyin photonic aramada ati awọn ohun elo MEMS. P-Iru 4H/6H-P wafers, doped pẹlu aluminiomu si 1×10¹⁶–5×10¹⁸ cm⁻³, dẹrọ imudara ẹrọ faaji.
PRIME wafers faragba kemikali – darí polishing to <0.2 nm RMS dada roughness, lapapọ sisanra iyatọ labẹ 3 µm, ati teriba <10 µm. Awọn sobusitireti DUMMY yara apejọ ati awọn idanwo iṣakojọpọ, lakoko ti awọn wafers WAA ṣe ẹya awọn sisanra epi-Layer ti 2–30 µm ati doping bespoke. Gbogbo awọn ọja ti ni ifọwọsi nipasẹ ipasẹ X-ray (apata gbigbọn <30 arcsec) ati Raman spectroscopy, pẹlu awọn idanwo itanna — Awọn wiwọn Hall, Profaili C-V, ati ọlọjẹ micropipe — ni idaniloju ibamu JEDEC ati SEMI.
Awọn bolu to 150 mm ni iwọn ila opin ti dagba nipasẹ PVT ati CVD pẹlu awọn iwuwo yiyọ kuro ni isalẹ 1 × 10³ cm⁻² ati awọn iṣiro micropipe kekere. Awọn kirisita irugbin ti ge laarin 0.1 ° ti aaye c-axis lati ṣe iṣeduro idagbasoke atunṣe ati awọn eso gige gige giga.
Nipa apapọ ọpọlọpọ awọn oriṣi polytypes, awọn iyatọ doping, awọn onipò didara, awọn iwọn wafer, ati boule inu ile ati iṣelọpọ irugbin-crystal, Syeed ti sobusitireti SiC wa n ṣatunṣe awọn ẹwọn ipese ati mu idagbasoke ẹrọ pọ si fun awọn ọkọ ina mọnamọna, awọn grids smart, ati awọn ohun elo agbegbe lile.
SiC wafer ká áljẹbrà
Silicon carbide (SiC) wafers ti di sobusitireti yiyan fun agbara-giga, igbohunsafẹfẹ giga, ati ẹrọ itanna iwọn otutu giga kọja ọkọ ayọkẹlẹ, agbara isọdọtun, ati awọn apa afẹfẹ. Portfolio wa ni wiwa awọn polytypes bọtini ati awọn eto doping-nitrogen-doped 4H (4H-N), idabobo ologbele-mimọ giga (HPSI), nitrogen-doped 3C (3C-N), ati p-type 4H / 6H (4H / 6H-P) - ti a funni ni awọn onidiwọn didara mẹta: PRIME tabi didan ti o ni kikun MMY, ẹrọ didan, awọn idanwo ilana), ati Iwadi (awọn ipele apọju aṣa ati awọn profaili doping fun R&D). Awọn iwọn ila opin wafer wa ni iwọn 2 ″, 4″, 6″, 8″, ati 12″ lati ba awọn irinṣẹ pataki mejeeji ati awọn fabs to ti ni ilọsiwaju ba. A tun pese awọn boules monocrystalline ati awọn kirisita irugbin ti o ni iṣalaye ni deede lati ṣe atilẹyin idagbasoke gara inu ile.
Wafers 4H-N ṣe ẹya awọn iwuwo gbigbe lati 1 × 10¹⁶ si 1 × 10¹⁹ cm⁻³ ati awọn resistance ti 0.01–10 Ω·cm, jiṣẹ iṣipopada elekitironi ti o dara julọ ati awọn aaye didenukole loke 2 MV/cm — bojumu fun awọn diodes Schottky, ati awọn MOFETs. Awọn sobusitireti HPSI kọja 1×10¹² Ω·cm resistivity pẹlu awọn iwuwo micropipe ni isalẹ 0.1 cm⁻², ni idaniloju jijo kekere fun RF ati awọn ẹrọ makirowefu. Cubic 3C-N, ti o wa ni awọn ọna kika 2 ″ ati 4 ″, ngbanilaaye heteroepitaxy lori ohun alumọni ati ṣe atilẹyin photonic aramada ati awọn ohun elo MEMS. P-Iru 4H/6H-P wafers, doped pẹlu aluminiomu si 1×10¹⁶–5×10¹⁸ cm⁻³, dẹrọ imudara ẹrọ faaji.
PRIME wafers faragba kemikali – darí polishing to <0.2 nm RMS dada roughness, lapapọ sisanra iyatọ labẹ 3 µm, ati teriba <10 µm. Awọn sobusitireti DUMMY yara apejọ ati awọn idanwo iṣakojọpọ, lakoko ti awọn wafers WAA ṣe ẹya awọn sisanra epi-Layer ti 2–30 µm ati doping bespoke. Gbogbo awọn ọja ti ni ifọwọsi nipasẹ ipasẹ X-ray (apata gbigbọn <30 arcsec) ati Raman spectroscopy, pẹlu awọn idanwo itanna — Awọn wiwọn Hall, Profaili C-V, ati ọlọjẹ micropipe — ni idaniloju ibamu JEDEC ati SEMI.
Awọn bolu to 150 mm ni iwọn ila opin ti dagba nipasẹ PVT ati CVD pẹlu awọn iwuwo yiyọ kuro ni isalẹ 1 × 10³ cm⁻² ati awọn iṣiro micropipe kekere. Awọn kirisita irugbin ti ge laarin 0.1 ° ti aaye c-axis lati ṣe iṣeduro idagbasoke atunṣe ati awọn eso gige gige giga.
Nipa apapọ ọpọlọpọ awọn oriṣi polytypes, awọn iyatọ doping, awọn onipò didara, awọn iwọn wafer, ati boule inu ile ati iṣelọpọ irugbin-crystal, Syeed ti sobusitireti SiC wa n ṣatunṣe awọn ẹwọn ipese ati mu idagbasoke ẹrọ pọ si fun awọn ọkọ ina mọnamọna, awọn grids smart, ati awọn ohun elo agbegbe lile.
SiC wafer ká aworan
6inch 4H-N iru SiC wafer ká data dì
| 6inch SiC wafers data dì | ||||
| Paramita | Iha-Parameter | Z ite | P ite | D ite |
| Iwọn opin | 149,5-150,0 mm | 149,5-150,0 mm | 149,5-150,0 mm | |
| Sisanra | 4H‑N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Sisanra | 4H-SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Wafer Iṣalaye | Pa axis: 4.0° si <11-20> ± 0.5° (4H-N); Lori ipo: <0001> ± 0.5° (4H-SI) | Pa axis: 4.0° si <11-20> ± 0.5° (4H-N); Lori ipo: <0001> ± 0.5° (4H-SI) | Pa axis: 4.0° si <11-20> ± 0.5° (4H-N); Lori ipo: <0001> ± 0.5° (4H-SI) | |
| Iwuwo Micropipe | 4H‑N | 0.2 cm⁻² | ≤2 cm⁻² | ≤ 15 cm⁻² |
| Iwuwo Micropipe | 4H-SI | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Resistivity | 4H‑N | 0.015–0.024 Ω · cm | 0.015–0.028 Ω·cm | 0.015–0.028 Ω·cm |
| Resistivity | 4H-SI | 1×10¹⁰ Ω·cm | 1×10⁵ Ω·cm | |
| Primary Flat Iṣalaye | [10-10] ± 5.0 ° | [10-10] ± 5.0 ° | [10-10] ± 5.0 ° | |
| Primary Flat Gigun | 4H‑N | 47,5 mm ± 2,0 mm | ||
| Primary Flat Gigun | 4H-SI | Ogbontarigi | ||
| Iyasoto eti | 3 mm | |||
| Warp / LTV / TTV / Teriba | ≤2.5 µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Irora | pólándì | Ra ≤ 1 nm | ||
| Irora | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Awọn dojuijako eti | Ko si | Ipari ipari ≤ 20 mm, ẹyọkan ≤ 2 mm | ||
| Hex farahan | Agbegbe akojọpọ ≤ 0.05% | Agbegbe akojọpọ ≤ 0.1% | Agbegbe akojọpọ ≤ 1% | |
| Awọn agbegbe Polytype | Ko si | Agbegbe akojọpọ ≤ 3% | Agbegbe akojọpọ ≤ 3% | |
| Erogba Ifisi | Agbegbe akojọpọ ≤ 0.05% | Agbegbe akojọpọ ≤ 3% | ||
| Dada Scratches | Ko si | Igi gigun ≤ 1 × iwọn ila opin wafer | ||
| Awọn eerun eti | Ko si idasilẹ ≥ 0.2 mm iwọn & ijinle | Titi di awọn eerun 7, ≤ 1 mm kọọkan | ||
| TSD (Yíyọ skru Skru) | ≤ 500 cm⁻² | N/A | ||
| BPD (Idipa Ọkọ ofurufu Ipilẹ) | ≤ 1000 cm⁻² | N/A | ||
| Idoti Dada | Ko si | |||
| Iṣakojọpọ | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | |
4inch 4H-N iru SiC wafer ká data dì
| 4inch SiC wafer ká data dì | |||
| Paramita | Odo MPD Production | Didara Iṣe Iṣejade (Ite P) | Idiwon Ite (D ite) |
| Iwọn opin | 99,5 mm-100,0 mm | ||
| Sisanra (4H-N) | 350 µm± 15 µm | 350 µm± 25 µm | |
| Sisanra (4H-Si) | 500 µm± 15 µm | 500 µm± 25 µm | |
| Wafer Iṣalaye | Pa axis: 4.0 ° si <1120> ± 0.5 ° fun 4H-N; Lori ipo: <0001> ± 0.5 ° fun 4H-Si | ||
| Ìwúwo Micropipe (4H-N) | ≤0.2 cm⁻² | ≤2 cm⁻² | ≤15 cm⁻² |
| Ìwúwo Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm² | ≤15 cm⁻² |
| Atako (4H-N) | 0.015–0.024 Ω · cm | 0.015–0.028 Ω·cm | |
| Resistivity (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Primary Flat Iṣalaye | [10-10] ± 5.0 ° | ||
| Primary Flat Gigun | 32,5 mm ± 2,0 mm | ||
| Secondary Flat Gigun | 18,0 mm ± 2,0 mm | ||
| Atẹle Flat Iṣalaye | Silikoni koju soke: 90 ° CW lati alapin akọkọ ± 5.0 ° | ||
| Iyasoto eti | 3 mm | ||
| LTV / TTV / Teriba Warp | ≤2.5 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Irora | Polish Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Eti dojuijako Nipa Ga kikankikan Light | Ko si | Ko si | Ipari ipari ≤10 mm; nikan ipari ≤2 mm |
| Hex farahan Nipa High kikankikan Light | Àgbègbè àkópọ̀ ≤0.05% | Àgbègbè àkópọ̀ ≤0.05% | Agbegbe akojọpọ ≤0.1% |
| Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga | Ko si | Agbegbe akojọpọ ≤3% | |
| Visual Erogba Ifisi | Àgbègbè àkópọ̀ ≤0.05% | Agbegbe akojọpọ ≤3% | |
| Silicon Surface Scratches Nipa Giga kikankikan Light | Ko si | Akopọ ipari ≤1 iwọn ila opin wafer | |
| Awọn eerun eti Nipa Imọlẹ Imọlẹ giga | Ko si idasilẹ ≥0.2 mm fifẹ ati ijinle | 5 laaye, ≤1 mm kọọkan | |
| Ohun alumọni dada kontaminesonu Nipa High kikankikan Light | Ko si | ||
| Threading dabaru dislocation | ≤500 cm⁻² | N/A | |
| Iṣakojọpọ | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan |
4inch HPSI iru SiC wafer ká data dì
| 4inch HPSI iru SiC wafer ká data dì | |||
| Paramita | Odo MPD Itejade (Ipele Z) | Didara Iṣe Iṣejade (Ite P) | Idiwon Ite (D ite) |
| Iwọn opin | 99.5-100.0 mm | ||
| Sisanra (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Wafer Iṣalaye | Pa axis: 4.0 ° si <11-20> ± 0.5 ° fun 4H-N; Lori ipo: <0001> ± 0.5 ° fun 4H-Si | ||
| Ìwúwo Micropipe (4H-Si) | ≤1 cm⁻² | ≤5 cm² | ≤15 cm⁻² |
| Resistivity (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Primary Flat Iṣalaye | (10-10) ± 5,0 ° | ||
| Primary Flat Gigun | 32,5 mm ± 2,0 mm | ||
| Secondary Flat Gigun | 18,0 mm ± 2,0 mm | ||
| Atẹle Flat Iṣalaye | Silikoni koju soke: 90 ° CW lati alapin akọkọ ± 5.0 ° | ||
| Iyasoto eti | 3 mm | ||
| LTV / TTV / Teriba Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Irora (oju C) | pólándì | Ra ≤1 nm | |
| Irora (oju Si) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Eti dojuijako Nipa Ga kikankikan Light | Ko si | Ipari ipari ≤10 mm; nikan ipari ≤2 mm | |
| Hex farahan Nipa High kikankikan Light | Àgbègbè àkópọ̀ ≤0.05% | Àgbègbè àkópọ̀ ≤0.05% | Agbegbe akojọpọ ≤0.1% |
| Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga | Ko si | Agbegbe akojọpọ ≤3% | |
| Visual Erogba Ifisi | Àgbègbè àkópọ̀ ≤0.05% | Agbegbe akojọpọ ≤3% | |
| Silicon Surface Scratches Nipa Giga kikankikan Light | Ko si | Akopọ ipari ≤1 iwọn ila opin wafer | |
| Awọn eerun eti Nipa Imọlẹ Imọlẹ giga | Ko si idasilẹ ≥0.2 mm fifẹ ati ijinle | 5 laaye, ≤1 mm kọọkan | |
| Ohun alumọni dada kontaminesonu Nipa High kikankikan Light | Ko si | Ko si | |
| Threading dabaru Dislocation | ≤500 cm⁻² | N/A | |
| Iṣakojọpọ | Kasẹti-wafer pupọ tabi eiyan wafer ẹyọkan | ||
Akoko ifiweranṣẹ: Jun-30-2025