2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Iwadi ati Idiwon ite

Ohun elo sobusitireti: 4H silikoni carbide (4H-SiC)

Ilana Crystal: tetrahexahedral (4H)

Doping: Undoped (4H-N)

Iwọn: 2 inches

Iru iṣiṣẹ: N-Iru (n-doped)

Conductivity: Semikondokito

Outlook Market: 4H-N ti kii-doped SiC wafers ni ọpọlọpọ awọn anfani, gẹgẹ bi awọn ga gbona iba ina elekitiriki, kekere conduction resistance, o dara ju iwọn otutu resistance, ati ki o ga darí iduroṣinṣin, ati bayi ni a gbooro oja Outlook ni agbara itanna ati RF ohun elo. Pẹlu idagbasoke ti agbara isọdọtun, awọn ọkọ ina ati awọn ibaraẹnisọrọ, ibeere ti n pọ si fun awọn ẹrọ pẹlu ṣiṣe giga, iṣẹ otutu giga ati ifarada agbara giga, eyiti o pese anfani ọja ti o gbooro fun awọn wafers SiC ti kii ṣe doped 4H-N.

Nlo: 2-inch 4H-N ti kii-doped SiC wafers le ṣee lo lati ṣe oniruuru ẹrọ itanna agbara ati awọn ẹrọ RF, pẹlu ṣugbọn kii ṣe opin si:

1--4H-SiC MOSFETs: Metal oxide semikondokito aaye ipa transistors fun agbara giga / awọn ohun elo otutu giga. Awọn ẹrọ wọnyi ni ipadanu kekere ati iyipada awọn adanu lati pese ṣiṣe ti o ga julọ ati igbẹkẹle.

2--4H-SiC JFETs: Junction FETs fun RF agbara ampilifaya ati yi pada awọn ohun elo. Awọn ẹrọ wọnyi nfunni ni iṣẹ igbohunsafẹfẹ giga ati iduroṣinṣin igbona giga.

3--4H-SiC Schottky Diodes: Diodes fun agbara giga, iwọn otutu giga, awọn ohun elo igbohunsafẹfẹ giga. Awọn ẹrọ wọnyi nfunni ni ṣiṣe giga pẹlu adaṣe kekere ati awọn adanu iyipada.

4--4H-SiC Awọn ẹrọ Optoelectronic: Awọn ẹrọ ti a lo ni awọn agbegbe bii awọn diodes laser agbara giga, awọn aṣawari UV ati awọn iyika iṣọpọ optoelectronic. Awọn ẹrọ wọnyi ni agbara giga ati awọn abuda igbohunsafẹfẹ.

Ni akojọpọ, 2-inch 4H-N ti kii-doped SiC wafers ni agbara fun ọpọlọpọ awọn ohun elo, paapaa ni ẹrọ itanna agbara ati RF. Iṣe wọn ti o ga julọ ati iduroṣinṣin iwọn otutu jẹ ki wọn jẹ oludije to lagbara lati rọpo awọn ohun elo ohun alumọni ibile fun iṣẹ ṣiṣe giga, iwọn otutu ati awọn ohun elo agbara giga.