8Inch 200mm 4H-N SiC Wafer Conductive idinwon iwadi ite

Apejuwe kukuru:

Bii gbigbe, agbara ati awọn ọja ile-iṣẹ n dagbasoke, ibeere fun igbẹkẹle, ẹrọ itanna iṣẹ ṣiṣe giga tẹsiwaju lati dagba.Lati pade awọn iwulo fun ilọsiwaju iṣẹ semikondokito, awọn aṣelọpọ ẹrọ n wa si awọn ohun elo semikondokito bandgap jakejado, gẹgẹbi 4H SiC Prime Grade portfolio ti 4H n -type silicon carbide (SiC) wafers.

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Alaye ọja

ọja Tags

Nitori awọn ohun-ini alailẹgbẹ ti ara ati itanna, 200mm SiC wafer semikondokito ohun elo ni a lo lati ṣẹda iṣẹ-giga, iwọn otutu giga, sooro-itanna, ati awọn ẹrọ itanna igbohunsafẹfẹ giga.Iye owo sobusitireti 8inch SiC n dinku diẹ sii bi imọ-ẹrọ ti ni ilọsiwaju diẹ sii ati ibeere naa dagba.Awọn idagbasoke imọ-ẹrọ aipẹ yori si iṣelọpọ iwọn iṣelọpọ ti awọn wafers 200mm SiC.Awọn anfani akọkọ ti awọn ohun elo semikondokito SiC wafer ni lafiwe pẹlu Si ati GaAs wafers: Agbara aaye ina ti 4H-SiC lakoko didenukole ọsan jẹ diẹ sii ju aṣẹ titobi ti o ga ju awọn iye ti o baamu fun Si ati GaAs.Eleyi nyorisi kan significant idinku ninu awọn on-ipinle resistivity Ron.Irẹwẹsi-kekere lori ipinlẹ, ni idapo pẹlu iwuwo lọwọlọwọ giga ati adaṣe igbona, ngbanilaaye lilo iku kekere pupọ fun awọn ẹrọ agbara.Awọn ga gbona elekitiriki ti SiC din awọn gbona resistance ti awọn ërún.Awọn ohun-ini itanna ti awọn ẹrọ ti o da lori awọn wafers SiC jẹ iduroṣinṣin pupọ ni akoko ati lori iduroṣinṣin iwọn otutu, eyiti o ṣe idaniloju igbẹkẹle giga ti awọn ọja.Ohun alumọni carbide jẹ lalailopinpin sooro si lile Ìtọjú, eyi ti ko ni degrade awọn itanna-ini ti awọn ërún.Iwọn otutu iṣiṣẹ diwọn giga ti gara (diẹ ẹ sii ju 6000C) gba ọ laaye lati ṣẹda awọn ẹrọ ti o gbẹkẹle gaan fun awọn ipo iṣẹ lile ati awọn ohun elo pataki.Ni lọwọlọwọ, a le pese ipele kekere 200mmSiC wafers ni imurasilẹ ati nigbagbogbo ati ni ọja diẹ ninu ile-itaja naa.

Sipesifikesonu

Nọmba	Nkan	Ẹyọ	Ṣiṣejade	Iwadi	Idiwon
1. paramita
1.1	oniruuru	--	4H	4H	4H
1.2	dada iṣalaye	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2. Electrical paramita
2.1	dopant	--	n-iru Nitrogen	n-iru Nitrogen	n-iru Nitrogen
2.2	resistivity	ohm · cm	0.015 ~ 0.025	0.01 ~ 0.03	NA
3. paramita ẹrọ
3.1	opin	mm	200± 0.2	200± 0.2	200± 0.2
3.2	sisanra	μm	500±25	500±25	500±25
3.3	Iṣalaye ogbontarigi	°	[1-100]±5	[1-100]±5	[1-100]±5
3.4	Ogbontarigi Ijinle	mm	1 ~ 1.5	1 ~ 1.5	1 ~ 1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Teriba	μm	-25-25	-45-45	-65-65
3.8	Ijagun	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Ilana
4.1	iwuwo micropipe	ea/cm2	≤2	≤10	≤50
4.2	irin akoonu	awọn ọta / cm2	≤1E11	≤1E11	NA
4.3	TSD	ea/cm2	≤500	≤1000	NA
4.4	BPD	ea/cm2	≤2000	≤5000	NA
4.5	TED	ea/cm2	≤7000	≤10000	NA
5. Didara to dara
5.1	iwaju	--	Si	Si	Si
5.2	dada pari	--	Si-oju CMP	Si-oju CMP	Si-oju CMP
5.3	patiku	ea/wafer	≤100(iwọn≥0.3μm)	NA	NA
5.4	ibere	ea/wafer	≤5, Lapapọ Gigun≤200mm	NA	NA
5.5	Eti awọn eerun / indents / dojuijako / abawọn / koto	--	Ko si	Ko si	NA
5.6	Awọn agbegbe Polytype	--	Ko si	Agbegbe ≤10%	Agbegbe ≤30%
5.7	iwaju siṣamisi	--	Ko si	Ko si	Ko si
6. Didara pada
6.1	pada pari	--	C-oju MP	C-oju MP	C-oju MP
6.2	ibere	mm	NA	NA	NA
6.3	Ẹyin abawọn eti eerun / indents	--	Ko si	Ko si	NA
6.4	Pada roughness	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Pada siṣamisi	--	Ogbontarigi	Ogbontarigi	Ogbontarigi
7. eti
7.1	eti	--	Chamfer	Chamfer	Chamfer
8. Package
8.1	apoti	--	Epi-setan pẹlu igbale apoti	Epi-setan pẹlu igbale apoti	Epi-setan pẹlu igbale apoti
8.2	apoti	--	Olona-wafer apoti kasẹti	Olona-wafer apoti kasẹti	Olona-wafer apoti kasẹti