4 inch oniyebiye Wafer C-ọkọ ofurufu SSP/DSP 0.43mm 0.65mm
Awọn ohun elo
● Sobusitireti idagbasoke fun III-V ati II-VI agbo.
● Electronics ati optoelectronics.
● Awọn ohun elo IR.
● Silikoni Lori Sapphire Integrated Circuit(SOS).
● Redio Igbohunsafẹfẹ Integrated Circuit (RFIC).
Ninu iṣelọpọ LED, awọn wafers sapphire ni a lo bi sobusitireti fun idagba ti gallium nitride (GaN) kirisita, eyiti o tan ina nigbati o ba lo lọwọlọwọ ina. Sapphire jẹ ohun elo sobusitireti ti o pe fun idagbasoke GaN nitori pe o ni eto gara ti o jọra ati imugboroja igbona si GaN, eyiti o dinku awọn abawọn ati ilọsiwaju didara gara.
Ni awọn opiki, awọn wafers sapphire ni a lo bi awọn window ati awọn lẹnsi ni titẹ-giga ati awọn agbegbe iwọn otutu, bakannaa ni awọn ọna ṣiṣe aworan infurarẹẹdi, nitori akoyawo giga ati lile wọn.
Sipesifikesonu
Nkan | 4-inch C-ofurufu (0001) 650μm oniyebiye Wafers | |
Awọn ohun elo Crystal | 99,999%, Giga ti nw, Monocrystalline Al2O3 | |
Ipele | NOMBA, Epi-Ṣetan | |
Dada Iṣalaye | C-ofurufu (0001) | |
C-ofurufu pa-igun si ọna M-ipo 0,2 +/- 0,1 ° | ||
Iwọn opin | 100,0 mm +/- 0,1 mm | |
Sisanra | 650 μm +/- 25 μm | |
Primary Flat Iṣalaye | A-ofurufu (11-20) +/- 0,2 ° | |
Primary Flat Gigun | 30,0 mm +/- 1,0 mm | |
Nikan Side didan | Iwaju Iwaju | Epi-didan, Ra <0.2 nm (nipasẹ AFM) |
(SSP) | Back Dada | Ilẹ ti o dara, Ra = 0.8 μm si 1.2 μm |
Double Side didan | Iwaju Iwaju | Epi-didan, Ra <0.2 nm (nipasẹ AFM) |
(DSP) | Back Dada | Epi-didan, Ra <0.2 nm (nipasẹ AFM) |
TTV | <20 μm | |
teriba | <20 μm | |
IGBAGBO | <20 μm | |
Ninu / Iṣakojọpọ | Kilasi 100 mimọ yara mimọ ati apoti igbale, | |
Awọn ege 25 ninu apoti kasẹti kan tabi apoti ẹyọkan. |
Iṣakojọpọ & Gbigbe
Ni gbogbogbo, a pese package nipasẹ apoti kasẹti 25pcs; a tun le ṣajọpọ nipasẹ eiyan wafer ẹyọkan labẹ yara mimọ iwọn 100 ni ibamu si ibeere alabara.
Alaye aworan atọka

