4 inch SiC Wafers 6H Semi-Insulating SiC Substrates akọkọ, iwadii, ati ite idinwon

Apejuwe kukuru:

Ohun alumọni carbide sobusitireti ologbele-idaabobo ti wa ni akoso nipa gige, lilọ, didan, ninu ati awọn miiran processing ọna ẹrọ lẹhin idagba ti ologbele-idabo ohun alumọni carbide gara. Layer tabi okuta kirisita multilayer ti dagba lori sobusitireti ti o pade awọn ibeere didara bi epitaxy, ati lẹhinna ẹrọ RF makirowefu jẹ nipasẹ apapọ apẹrẹ iyika ati apoti. Wa bi 2inch 3inch 4incgh 6inch 8 inch ise, iwadi ati igbeyewo ite ologbele-idabo silikoni carbide nikan gara sobsitireti.


Alaye ọja

ọja Tags

Ọja Specification

Ipele

Odo MPD Itejade (Ipele Z)

Iwọn Iṣelọpọ Boṣewa(P ite)

Idiwon Ite (D ite)

 
Iwọn opin 99,5 mm ~ 100,0 mm  
  4H-SI 500 μm± 20 μm

500 μm± 25 μm

 
Wafer Iṣalaye  

 

Pa axis: 4.0° si <1120> ± 0.5° fun 4H-N, Lori ipo: <0001>±0.5° fun 4H-SI

 
  4H-SI

≤1cm-2

≤5 cm-2

≤15 cm-2

 
  4H-SI

≥1E9 Ω·cm

≥1E5 Ω·cm

 
Primary Flat Iṣalaye

{10-10} ±5.0°

 
Primary Flat Gigun 32,5 mm ± 2,0 mm  
Secondary Flat Gigun 18,0 mm ± 2,0 mm  
Atẹle Flat Iṣalaye

Silikoni koju soke: 90° CW. lati NOMBA alapin ± 5,0 °

 
Iyasoto eti

3 mm

 
LTV/TTV/ Teriba / Warp ≤3 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm  
 

Irora

C oju

    pólándì Ra≤1 nm

Si oju

CMP Ra≤0.2 nm    

Ra≤0.5 nm

Eti dojuijako Nipa Ga kikankikan Light

Ko si

Akopọ ipari ≤ 10 mm, ẹyọkan

ipari≤2 mm

 
Hex farahan Nipa High kikankikan Light Agbegbe akojọpọ ≤0.05% Agbegbe akojọpọ ≤0.1%  
Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga

Ko si

Agbegbe akojọpọ≤3%  
Visual Erogba Ifisi Agbegbe akojọpọ ≤0.05% Agbegbe akojọpọ ≤3%  
Silicon Surface Scratches Nipa Giga kikankikan Light  

Ko si

Àkópọ̀ gigun≤1*wafer diamita  
Eti Chips Ga Nipa kikankikan Light Ko si idasilẹ ≥0.2 mm fifẹ ati ijinle 5 laaye, ≤1 mm kọọkan  
Ohun alumọni dada kontaminesonu Nipa Ga kikankikan

Ko si

 
Iṣakojọpọ

Kasẹti-wafer pupọ Tabi Apoti Wafer Nikan

 

Alaye aworan atọka

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Ekunrere aworan atọka (2)

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