4 inch SiC Wafers 6H Semi-Insulating SiC Substrates alakoko, iwadii, ati ite idinwon
Ọja Specification
| Ipele | Odo MPD Itejade (Ipele Z) | Iwọn Iṣelọpọ Boṣewa(P ite) | Idiwon Ite (D ite) | ||||||||
| Iwọn opin | 99,5 mm ~ 100,0 mm | ||||||||||
| 4H-SI | 500 μm± 20 μm | 500 μm± 25 μm | |||||||||
| Wafer Iṣalaye |
Pa axis: 4.0° si <1120> ± 0.5° fun 4H-N, Lori ipo: <0001>±0.5° fun 4H-SI | ||||||||||
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
| Primary Flat Iṣalaye | {10-10} ±5.0° | ||||||||||
| Primary Flat Gigun | 32,5 mm ± 2,0 mm | ||||||||||
| Secondary Flat Gigun | 18,0 mm ± 2,0 mm | ||||||||||
| Atẹle Flat Iṣalaye | Silikoni koju soke: 90° CW. lati NOMBA alapin ± 5,0 ° | ||||||||||
| Iyasoto eti | 3 mm | ||||||||||
| LTV/TTV/ Teriba / Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
| Irora | C oju | pólándì | Ra≤1 nm | ||||||||
| Si oju | CMP | Ra≤0.2 nm | Ra≤0.5 nm | ||||||||
| Eti dojuijako Nipa Ga kikankikan Light | Ko si | Akopọ ipari ≤ 10 mm, ẹyọkan ipari≤2 mm | |||||||||
| Hex farahan Nipa High kikankikan Light | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤0.1% | |||||||||
| Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga | Ko si | Agbegbe akojọpọ≤3% | |||||||||
| Visual Erogba Ifisi | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤3% | |||||||||
| Silicon Surface Scratches Nipa Giga kikankikan Light | Ko si | Àkópọ̀ gigun≤1＊wafer diamita | |||||||||
| Eti Chips Ga Nipa kikankikan Light | Ko si idasilẹ ≥0.2 mm fifẹ ati ijinle | 5 laaye, ≤1 mm kọọkan | |||||||||
| Ohun alumọni dada kontaminesonu Nipa Ga kikankikan | Ko si | ||||||||||
| Iṣakojọpọ | Kasẹti-wafer pupọ Tabi Apoti Wafer Nikan | ||||||||||
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