6 Inch 4H SEMI Iru SiC apapo sobusitireti Sisanra 500μm TTV≤5μm MOS ite

6 Inch 4H SEMI Iru SiC idapọ sobusitireti Sisanra 500μm TTV≤5μm MOS ite Aworan Ifihan

Apejuwe kukuru:

Pẹlu ilọsiwaju iyara ti awọn ibaraẹnisọrọ 5G ati imọ-ẹrọ radar, 6-inch ologbele-insulating SiC composite substrate ti di ohun elo mojuto fun iṣelọpọ ẹrọ igbohunsafẹfẹ giga. Ti a ṣe afiwe si awọn sobusitireti GaAs ti aṣa, sobusitireti yii n ṣetọju resistivity giga (> 10⁸ Ω · cm) lakoko ti o ni ilọsiwaju imudara igbona nipasẹ diẹ sii ju 5x, ni imunadoko awọn italaya itusilẹ ooru ni awọn ẹrọ igbi-milimita. Awọn ampilifaya agbara inu awọn ẹrọ lojoojumọ bii awọn fonutologbolori 5G ati awọn ebute ibaraẹnisọrọ satẹlaiti jẹ eyiti a kọ sori sobusitireti yii. Lilo imọ-ẹrọ “ẹsan-ẹsan doping Layer buffer” ohun-ini wa, a ti dinku iwuwo micropipe si isalẹ 0.5/cm² ati ṣaṣeyọri pipadanu makirowefu-kekere ti 0.05 dB/mm.

Fi imeeli ranṣẹ si wa

Alaye ọja

ọja Tags

Imọ paramita

Awọn nkan	Sipesifikesonu	Awọn nkan	Sipesifikesonu
Iwọn opin	150± 0.2 mm	Iwaju (Si-oju) roughness	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	Chip Edge, Scratch, Crack (ayẹwo wiwo)	Ko si
Resistivity	≥1E8 Ω·cm	TTV	≤5 μm
Gbigbe Layer Sisanra	≥0.4 μm	Ijagun	≤35 μm
Ofo (2mm>D>0.5mm)	≤5 ea/Wafer	Sisanra	500± 25 μm

Key Awọn ẹya ara ẹrọ

1. Exceptional High-Igbohunsafẹfẹ Performance
6-inch ologbele-insulating SiC composite sobusitireti n gba apẹrẹ iwọn dielectric ti iwọn, ni idaniloju iyatọ igbagbogbo dielectric ti <2% ninu Ka-band (26.5-40 GHz) ati imudara aitasera alakoso nipasẹ 40%. 15% ilosoke ninu ṣiṣe ati 20% agbara agbara kekere ni awọn modulu T / R ni lilo sobusitireti yii.

2. Apejuwe Gbona Management
“Afara gbigbona” alailẹgbẹ eto akojọpọ jẹ ki iṣiṣẹ igbona ita ti 400 W/m·K. Ni 28 GHz 5G ipilẹ ibudo PA awọn modulu, iwọn otutu idapọmọra ga soke nipasẹ 28 ° C nikan lẹhin awọn wakati 24 ti iṣiṣẹ lilọsiwaju — 50°C dinku ju awọn solusan aṣa lọ.

3. Didara Wafer ti o ga julọ
Nipasẹ ọna gbigbe Gbigbe Ti ara ti o dara julọ (PVT), a ṣaṣeyọri iwuwo dislocation <500/cm² ati Iyipada Sisanra Lapapọ (TTV) <3 μm.
4. Ṣiṣe-ṣiṣe-ọfẹ Ṣiṣe
Ilana annealing lesa wa ni idagbasoke ni pataki fun 6-inch ologbele-insulating SiC composite composite sobusitireti dinku iwuwo ipo dada nipasẹ awọn aṣẹ titobi meji ṣaaju apọju.

Awọn ohun elo akọkọ

1. 5G Mimọ Station Core irinše
Ninu awọn ọna eriali MIMO Massive, awọn ẹrọ GaN HEMT lori awọn sobusitireti idapọmọra SiC 6-inch ologbele-insulating SiC ṣaṣeyọri agbara iṣelọpọ 200W ati> ṣiṣe ṣiṣe. Awọn idanwo aaye ni 3.5 GHz ṣe afihan ilosoke 30% ni redio agbegbe.

2. Satellite Communication Systems
Awọn transceivers satẹlaiti kekere-Earth (LEO) ni lilo sobusitireti yii ṣe afihan 8 dB giga EIRP ni ẹgbẹ Q-band (40 GHz) lakoko ti o dinku iwuwo nipasẹ 40%. Awọn ebute SpaceX Starlink ti gba fun iṣelọpọ pupọ.

3. Military Reda Systems
Awọn modulu T/R radar-alakoso lori sobusitireti yii ṣaṣeyọri bandiwidi 6-18 GHz ati eeya ariwo bi kekere bi 1.2 dB, ti o fa iwọn wiwa nipasẹ 50 km ni awọn eto radar ikilọ ni kutukutu.

4. Automotive Milimita-igbi Reda
Awọn eerun radar adaṣe adaṣe 79 GHz ni lilo sobusitireti yii ṣe ilọsiwaju ipinnu angula si 0.5 °, ni ipade awọn ibeere awakọ adase L4.

A nfunni ni ojutu iṣẹ adani kikun fun 6-inch ologbele-insulating SiC composite substrates. Ni awọn ofin ti isọdi ohun elo, a ṣe atilẹyin ilana kongẹ ti resistivity laarin iwọn 10⁶-10¹⁰ Ω·cm. Ni pataki fun awọn ohun elo ologun, a le funni ni aṣayan resistance giga-giga ti> 10⁹ Ω·cm. O funni ni awọn alaye sisanra mẹta ti 200μm, 350μm ati 500μm ni nigbakannaa, pẹlu ifarada ti o muna ni iṣakoso laarin ± 10μm, pade awọn ibeere oriṣiriṣi lati awọn ẹrọ igbohunsafẹfẹ giga si awọn ohun elo agbara-giga.

Ni awọn ofin ti awọn ilana itọju dada, a nfun awọn solusan ọjọgbọn meji: Kemikali Mechanical Polishing (CMP) le ṣaṣeyọri iyẹfun ipele atomiki pẹlu Ra <0.15nm, pade awọn ibeere idagbasoke epitaxial ti o nbeere julọ; Imọ-ẹrọ itọju oju oju ti epitaxial ti o ṣetan fun awọn ibeere iṣelọpọ iyara le pese awọn ipele didan ultra pẹlu Sq<0.3nm ati sisanra ohun elo afẹfẹ <1nm, di irọrun ilana ilana iṣaaju ni opin alabara.

XKH n pese awọn solusan ti adani ni kikun fun 6-inch ologbele-idabobo awọn sobusitireti akojọpọ SiC

1. Ohun elo Parameter isọdi
A n funni ni yiyi resistivity kongẹ laarin iwọn 10⁶-10¹⁰ Ω·cm, pẹlu awọn aṣayan resistivity ultra-ga pataki>10⁹ Ω·cm wa fun awọn ohun elo ologun/ofurufu.

2. Sisanra pato
Awọn aṣayan sisanra idiwọn mẹta:

200μm (iṣapeye fun awọn ẹrọ igbohunsafẹfẹ giga)

· 350μm (sipesifikesonu boṣewa)

· 500μm (apẹrẹ fun awọn ohun elo agbara giga)
Gbogbo awọn iyatọ ṣetọju awọn ifarada sisanra ti o nipọn ti ± 10μm.

3. Dada Itọju Technologies

Kemikali Mechanical Polishing (CMP): Ṣe aṣeyọri fifẹ dada ipele atomiki pẹlu Ra<0.15nm, pade awọn ibeere idagbasoke epitaxial stringent fun RF ati awọn ẹrọ agbara.

4. Epi-Ready dada Processing

Pese awọn ipele didan pupọ pẹlu Sq <0.3nm roughness

· Ṣakoso sisanra oxide abinibi si <1nm

· Imukuro to awọn igbesẹ iṣaaju-iṣaaju mẹta ni awọn ohun elo alabara