6 inch SiC Kirisita kan ti o ṣe adaṣe lori polycrystalline SiC composite sobsitireti Iwọn ila opin 150mm P iru N iru
Imọ paramita
| Iwọn: | 6 inch |
| Opin: | 150 mm |
| Sisanra: | 400-500 μm |
| Monocrystalline SiC Film Parameters | |
| Irú Poly: | 4H-SiC tabi 6H-SiC |
| Ifojusi Doping: | 1×10¹⁴ - 1×10¹⁸ cm⁻³ |
| Sisanra: | 5-20 μm |
| Atako dì: | 10-1000 Ω/sq |
| Gbigbe Itanna: | 800-1200 cm²/Vs |
| Gbigbe Iho: | 100-300 cm²/Vs |
| Polycrystalline SiC Buffer Layer Parameters | |
| Sisanra: | 50-300 μm |
| Imudara Ooru: | 150-300 W/m·K |
| Awọn paramita Sobusitireti Monocrystalline SiC | |
| Irú Poly: | 4H-SiC tabi 6H-SiC |
| Ifojusi Doping: | 1×10¹⁴ - 1×10¹⁸ cm⁻³ |
| Sisanra: | 300-500 μm |
| Iwon ọkà: | > 1 mm |
| Irira Ilẹ: | <0.3 mm RMS |
| darí & Electrical Properties | |
| Lile: | 9-10 Mohs |
| Agbara Ipilẹṣẹ: | 3-4 GPA |
| Agbara fifẹ: | 0.3-0.5 GPA |
| Agbara aaye Pipin: | > 2 MV / cm |
| Lapapọ Ifarada iwọn lilo: | > 10 Ọgbẹni |
| Atako Ipa Iṣẹlẹ Kanṣoṣo: | > 100 MeV·cm²/mg |
| Imudara Ooru: | 150-380 W/m·K |
| Iwọn iwọn otutu ti nṣiṣẹ: | -55 si 600 °C |
Awọn abuda bọtini
SiC monocrystalline conductive 6-inch lori sobusitireti akojọpọ SiC polycrystalline nfunni iwọntunwọnsi alailẹgbẹ ti eto ohun elo ati iṣẹ ṣiṣe, ti o jẹ ki o dara fun awọn agbegbe ile-iṣẹ nbeere:
1.Cost-Effectiveness: The polycrystalline SiC base substantially din owo akawe si full-monocrystalline SiC, nigba ti monocrystalline SiC Layer ti nṣiṣe lọwọ idaniloju ẹrọ-ite išẹ, apẹrẹ fun iye owo-kókó ohun elo.
2.Exceptional Electrical Properties: Awọn monocrystalline SiC Layer ṣe afihan gbigbe gbigbe ti o ga (> 500 cm² / V · s) ati iwuwo abawọn kekere, atilẹyin iṣẹ-igbohunsafẹfẹ giga ati agbara-giga ẹrọ.
3.High-Temperature Stability: SiC's inherent inherent high-temperature resistance (> 600 ° C) ṣe idaniloju pe sobusitireti apapo duro ni iduroṣinṣin labẹ awọn ipo ti o pọju, ti o jẹ ki o dara fun awọn ọkọ ayọkẹlẹ ina ati awọn ohun elo ọkọ ayọkẹlẹ ile-iṣẹ.
4.6-inch Idiwon Wafer Iwon: Akawe si ibile 4-inch SiC sobsitireti, awọn 6-inch kika posi ni ërún nipa lori 30%, atehinwa fun-kuro ẹrọ owo.
5.Conductive Design: Pre-doped N-type tabi P-type layers gbe awọn igbesẹ ion gbin silẹ ni iṣelọpọ ẹrọ, imudarasi ṣiṣe iṣelọpọ ati ikore.
6.Superior Thermal Management: The polycrystalline SiC base's thermal conductivity (~ 120 W / m · K) awọn isunmọ ti monocrystalline SiC, ni imunadoko awọn italaya ifasilẹ ooru ni awọn ẹrọ agbara-giga.
Awọn abuda wọnyi wa ipo SiC monocrystalline conductive 6-inch lori sobusitireti akojọpọ SiC polycrystalline gẹgẹbi ojutu ifigagbaga fun awọn ile-iṣẹ bii agbara isọdọtun, gbigbe ọkọ oju-irin, ati aaye afẹfẹ.
Awọn ohun elo akọkọ
SiC monocrystalline conductive 6-inch lori sobusitireti akojọpọ SiC polycrystalline ti ni aṣeyọri ni imuṣiṣẹ ni ọpọlọpọ awọn aaye ibeere giga:
1.Electric Vehicle Powertrains: Ti a lo ninu awọn SiC MOSFET giga-voltage ati awọn diodes lati mu iṣẹ-ṣiṣe inverter ṣiṣẹ ati ki o fa ibiti batiri (fun apẹẹrẹ, Tesla, awọn awoṣe BYD).
2.Industrial Motor Drives: Ṣiṣe awọn iwọn otutu-giga, awọn modulu agbara-igbohunsafẹfẹ-igbohunsafẹfẹ, idinku agbara agbara ni awọn ẹrọ ti o wuwo ati awọn turbines afẹfẹ.
3.Photovoltaic Inverters: Awọn ẹrọ SiC mu ilọsiwaju iyipada oorun ṣiṣẹ (> 99%), lakoko ti sobusitireti apapo siwaju sii dinku awọn idiyele eto.
4.Rail Transportation: Ti a fiweranṣẹ ni awọn oluyipada itọpa fun awọn ọna iṣinipopada ti o ga-giga ati awọn ọna ọkọ oju-irin alaja, ti o funni ni idaabobo giga-voltage (> 1700V) ati awọn fọọmu fọọmu.
5.Aerospace: Apẹrẹ fun awọn ọna ṣiṣe agbara satẹlaiti ati awọn irin-ajo iṣakoso ọkọ ofurufu, ti o lagbara lati duro awọn iwọn otutu ati itọsi.
Ninu iṣelọpọ iṣe, 6-inch conductive monocrystalline SiC lori sobusitireti apapo SiC polycrystalline jẹ ibaramu ni kikun pẹlu awọn ilana ẹrọ SiC boṣewa (fun apẹẹrẹ, lithography, etching), ko nilo afikun idoko-owo olu.
Awọn iṣẹ XKH
XKH pese atilẹyin okeerẹ fun SiC monocrystalline conductive 6-inch lori sobusitireti akojọpọ SiC polycrystalline, ti o bo R&D si iṣelọpọ pupọ:
1.Customization: Adijositabulu monocrystalline sisanra Layer (5-100 μm), doping fojusi (1e15-1e19 cm⁻³), ati ki o gara iṣalaye (4H / 6H-SiC) lati pade Oniruuru ẹrọ ibeere.
2.Wafer Processing: Ipese olopobobo ti awọn sobsitireti 6-inch pẹlu tinrin ti ẹhin ẹhin ati awọn iṣẹ iṣelọpọ fun iṣọpọ plug-ati-play.
3.Technical Validation: Pẹlu XRD crystallinity onínọmbà, Hall ipa igbeyewo, ati ki o gbona resistance wiwọn lati mu ohun elo afijẹẹri.
4.Rapid Prototyping: 2- si 4-inch awọn ayẹwo (ilana kanna) fun awọn ile-iṣẹ iwadi lati mu awọn ipele idagbasoke dagba.
5.Failure Analysis & Ti o dara ju: Awọn ipinnu ohun elo-ipele fun awọn italaya sisẹ (fun apẹẹrẹ, awọn abawọn Layer epitaxial).
Ise apinfunni wa ni lati ṣe agbekalẹ SiC monocrystalline conductive 6-inch lori sobusitireti idapọmọra SiC polycrystalline gẹgẹbi ipinnu iṣẹ ṣiṣe idiyele ti o fẹ fun ẹrọ itanna agbara SiC, fifun atilẹyin ipari-si-opin lati ṣiṣe adaṣe si iṣelọpọ iwọn didun.
Ipari
6-inch conductive monocrystalline SiC lori polycrystalline SiC apapo sobusitireti ṣaṣeyọri iwọntunwọnsi aropin laarin iṣẹ ati idiyele nipasẹ ẹya arabara mono/polycrystalline tuntun rẹ. Bii awọn ọkọ ina ti n pọ si ati awọn ilọsiwaju ile-iṣẹ 4.0, sobusitireti yii n pese ipilẹ ohun elo ti o ni igbẹkẹle fun ẹrọ itanna agbara iran atẹle. XKH ṣe itẹwọgba awọn ifowosowopo lati ṣawari siwaju si agbara ti imọ-ẹrọ SiC.
