8inch SiC Production ite wafer 4H-N SiC sobusitireti

Apejuwe kukuru:

Awọn sobusitireti SiC 8-inch ni a lo ni awọn ẹrọ itanna ti o ni agbara giga, gẹgẹbi agbara MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), awọn diodes Schottky ati awọn ẹrọ semikondokito agbara miiran.

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ọja Tags

Tabili ti o tẹle fihan awọn pato ti awọn wafers SiC 8inch wa:

8inch N-type SiC DSP Specs
Nọmba	Nkan	Ẹyọ	Ṣiṣejade	Iwadi	Idiwon
1: paramita
1.1	oniruuru	--	4H	4H	4H
1.2	dada iṣalaye	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2: Itanna paramita
2.1	dopant	--	n-iru Nitrogen	n-iru Nitrogen	n-iru Nitrogen
2.2	resistivity	ohm · cm	0.015 ~ 0.025	0.01 ~ 0.03	NA
3: paramita ẹrọ
3.1	opin	mm	200± 0.2	200± 0.2	200± 0.2
3.2	sisanra	μm	500±25	500±25	500±25
3.3	Iṣalaye ogbontarigi	°	[1-100]±5	[1-100]±5	[1-100]±5
3.4	Ogbontarigi Ijinle	mm	1 ~ 1.5	1 ~ 1.5	1 ~ 1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Teriba	μm	-25-25	-45-45	-65-65
3.8	Ogun	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4:Eto
4.1	iwuwo micropipe	ea/cm2	≤2	≤10	≤50
4.2	irin akoonu	awọn ọta / cm2	≤1E11	≤1E11	NA
4.3	TSD	ea/cm2	≤500	≤1000	NA
4.4	BPD	ea/cm2	≤2000	≤5000	NA
4.5	TED	ea/cm2	≤7000	≤10000	NA
5.Front didara
5.1	iwaju	--	Si	Si	Si
5.2	dada pari	--	Si-oju CMP	Si-oju CMP	Si-oju CMP
5.3	patiku	ea/wafer	≤100(iwọn≥0.3μm)	NA	NA
5.4	ibere	ea/wafer	≤5, Lapapọ Gigun≤200mm	NA	NA
5.5	Eti awọn eerun / indents / dojuijako / abawọn / koto	--	Ko si	Ko si	NA
5.6	Awọn agbegbe Polytype	--	Ko si	Agbegbe ≤10%	Agbegbe ≤30%
5.7	iwaju siṣamisi	--	Ko si	Ko si	Ko si
6: Pada didara
6.1	pada pari	--	C-oju MP	C-oju MP	C-oju MP
6.2	ibere	mm	NA	NA	NA
6.3	Awọn abawọn afẹyinti eerun / indents	--	Ko si	Ko si	NA
6.4	Pada roughness	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Pada siṣamisi	--	Ogbontarigi	Ogbontarigi	Ogbontarigi
7: eti
7.1	eti	--	Chamfer	Chamfer	Chamfer
8: Package
8.1	apoti	--	Epi-setan pẹlu igbale apoti	Epi-setan pẹlu igbale apoti	Epi-setan pẹlu igbale apoti
8.2	apoti	--	Olona-wafer apoti kasẹti	Olona-wafer apoti kasẹti	Olona-wafer apoti kasẹti