Ti adani SiC Irugbin Crystal Sobsitireti Dia 205/203/208 4H-N Iru fun Awọn ibaraẹnisọrọ Opitika

Ti adani SiC Irugbin Crystal Sobsitireti Dia 205/203/208 4H-N Iru fun Aworan Ifihan

Apejuwe kukuru:

SiC (ohun alumọni carbide) awọn sobusitireti irugbin gara, gẹgẹbi awọn oluyaworan ti awọn ohun elo semikondokito ti iran-kẹta, le ṣe agbega ifọkansi igbona giga wọn (4.9 W / cm · K), agbara aaye fifọ-giga giga (2 – 4 MV / cm), ati bandgap jakejado (3.2 eV) lati ṣiṣẹ bi awọn ohun elo ipilẹ fun awọn ọkọ ayọkẹlẹ optoelectronics, awọn ohun elo agbara 5G. Nipasẹ awọn imọ-ẹrọ iṣelọpọ to ti ni ilọsiwaju gẹgẹbi gbigbe ọkọ oju omi ti ara (PVT) ati epitaxy alakoso omi (LPE), XKH pese 4H / 6H-N-Iru, idabobo ologbele, ati awọn sobusitireti irugbin polytype 3C-SiC ni awọn ọna kika wafer 2 – 12-inch, pẹlu awọn iwuwo micropipe ni isalẹ 0.3 cm⁻–2cm lati dada, resistance aibikita (Ra) <0.2 nm. Awọn iṣẹ wa pẹlu idagbasoke heteroepitaxial (fun apẹẹrẹ, SiC-on-Si), machining nanoscale konge (± 0.1 μm ifarada), ati ifijiṣẹ iyara agbaye, fi agbara fun awọn alabara lati bori awọn idena imọ-ẹrọ ati yara didoju erogba ati iyipada oye.

Fi imeeli ranṣẹ si wa

Awọn ẹya ara ẹrọ

Imọ paramita

Silicon carbide irugbin wafer
Polytype	4H
Dada Iṣalaye aṣiṣe	4 ° si <11-20>± 0.5º
Resistivity	isọdi
Iwọn opin	205 ± 0.5mm
Sisanra	600± 50μm
Irora	CMP, Ra≤0.2nm
Iwuwo Micropipe	≤1 ea/cm2
Scratches	≤5,Apapọ Gigun≤2*Opin
Awọn eerun eti / indents	Ko si
Iwaju lesa siṣamisi	Ko si
Scratches	≤2,Apapọ Gigun≤Opin
Awọn eerun eti / indents	Ko si
Awọn agbegbe Polytype	Ko si
Pada lesa siṣamisi	1mm (lati eti oke)
Eti	Chamfer
Iṣakojọpọ	Olona-wafer kasẹti

Awọn abuda bọtini

1. Crystal Be ati Electrical Performance

· Iduroṣinṣin Crystallographic: 100% 4H-SiC polytype dominance, odo multicrystalline inclusions (fun apẹẹrẹ, 6H/15R), pẹlu XRD rocking curve full-iwọn ni idaji-o pọju (FWHM) ≤32.7 arcsec.

· Gbigbe Gbigbe Giga: Irin-ajo elekitironi ti 5,400 cm²/V·s (4H-SiC) ati iṣipopada iho ti 380 cm²/V·s, ti n mu awọn apẹrẹ ẹrọ igbohunsafẹfẹ-giga ṣiṣẹ.

· Lile Radiation: Diduro itanna neutroni 1 MeV pẹlu iloro ibajẹ nipo ti 1×10¹⁵ n/cm², o dara julọ fun aaye afẹfẹ ati awọn ohun elo iparun.

2. Gbona ati Mechanical Properties

· Imudara Gbona Iyatọ: 4.9 W/cm · K (4H-SiC), ilọpo mẹta ti ohun alumọni, iṣẹ atilẹyin loke 200°C.

· Imudara Imugboroosi Gbona Kekere: CTE ti 4.0 × 10⁻⁶/K (25–1000°C), ni idaniloju ibamu pẹlu apoti ti o da lori ohun alumọni ati idinku wahala igbona.

3. Iṣakoso abawọn ati Itọkasi Ilana

· Ìwúwo Micropipe: <0.3 cm⁻² (awọn abọ 8-inch), iwuwo yiyọ kuro <1,000 cm⁻² (jẹrisi nipasẹ KOH etching).

Didara oju: CMP-didan si Ra <0.2 nm, pade EUV lithography-grade flatness awọn ibeere.

Awọn ohun elo bọtini

Ibugbe	Awọn oju iṣẹlẹ ohun elo	Awọn anfani Imọ-ẹrọ
Awọn ibaraẹnisọrọ Optical	100G/400G lesa, ohun alumọni photonics arabara modulu	Awọn sobusitireti irugbin InP jẹ ki bandgap taara (1.34 eV) ati heteroepitaxy ti o da lori Si, idinku pipadanu isọpọ opiti.
Awọn ọkọ Agbara Tuntun	Awọn oluyipada foliteji giga 800V, awọn ṣaja inu ọkọ (OBC)	Awọn sobusitireti 4H-SiC duro> 1,200 V, idinku awọn adanu idari nipasẹ 50% ati iwọn eto nipasẹ 40%.
Awọn ibaraẹnisọrọ 5G	Milimita-igbi RF awọn ẹrọ (PA/LNA), ipilẹ agbara amplifiers	Awọn sobusitireti SiC ologbele-idabobo (resistivity> 10⁵ Ω·cm) jẹ ki irẹpọ-igbohunsafẹfẹ giga (60 GHz+) isọpọ palolo.
Awọn ohun elo ile-iṣẹ	Awọn sensọ iwọn otutu giga, awọn oluyipada lọwọlọwọ, awọn diigi riakito iparun	Awọn sobusitireti irugbin InSb (0.17 eV bandgap) ṣafihan ifamọ oofa to 300%@10 T.

Awọn anfani bọtini

SiC (silicon carbide) awọn sobusitireti awọn irugbin gara ti n pese iṣẹ ti ko ni afiwe pẹlu 4.9 W / cm · K ifarapa igbona, 2 – 4 MV / cm didenukole aaye agbara, ati 3.2 eV bandgap jakejado, ṣiṣe agbara-giga, igbohunsafẹfẹ giga, ati awọn ohun elo iwọn otutu giga. Ni ifihan iwuwo micropipe odo ati <1,000 cm⁻² iwuwo dislocation, awọn sobusitireti wọnyi ṣe idaniloju igbẹkẹle ni awọn ipo to gaju. Inertness kemikali wọn ati awọn ipele ti o ni ibamu pẹlu CVD (Ra <0.2 nm) ṣe atilẹyin idagbasoke heteroepitaxial ilọsiwaju (fun apẹẹrẹ, SiC-on-Si) fun optoelectronics ati awọn eto agbara EV.

Awọn iṣẹ XKH:

1. iṣelọpọ ti adani

· Awọn ọna kika Wafer ti o rọ: 2-12-inch wafers pẹlu ipin, onigun merin, tabi awọn gige apẹrẹ ti aṣa (± 0.01 mm ifarada).

· Iṣakoso doping: nitrogen kongẹ (N) ati aluminiomu (Al) doping nipasẹ CVD, iyọrisi resistivity awọn sakani lati 10⁻³ si 10⁶ Ω·cm.

2. Awọn Imọ-ẹrọ Ilana Ilọsiwajuo

· Heteroepitaxy: SiC-on-Si (ibaramu pẹlu 8-inch silikoni ila) ati SiC-on-Diamond (gbona conductivity> 2,000 W / m · K).

· Imukuro abawọn: etching hydrogen ati annealing lati dinku micropipe/awọn abawọn iwuwo, imudarasi ikore wafer si>95%.

3. Didara Management Systemso

Idanwo Ipari-si-Ipari: Raman spectroscopy (ijẹrisi polytype), XRD (crystallinity), ati SEM (itupalẹ abawọn).

· Awọn iwe-ẹri: Ni ibamu pẹlu AEC-Q101 (ọkọ ayọkẹlẹ), JEDEC (JEDEC-033), ati MIL-PRF-38534 (ologun-grade).

4. Global Ipese pq Supporto

· Agbara iṣelọpọ: Ijade oṣooṣu> 10,000 wafers (60% 8-inch), pẹlu ifijiṣẹ pajawiri 48-wakati.

· Nẹtiwọọki Awọn eekaderi: Ibora ni Yuroopu, Ariwa America, ati Asia-Pacific nipasẹ ẹru afẹfẹ / okun pẹlu iṣakojọpọ iṣakoso iwọn otutu.

5. Imọ Co-Idagbasokeo

· Ijọpọ R&D Labs: Ṣe ifowosowopo lori iṣapeye iṣapeye module agbara SiC (fun apẹẹrẹ, isọpọ sobusitireti DBC).

· Iwe-aṣẹ IP: Pese GaN-on-SiC RF iwe-aṣẹ imọ-ẹrọ idagbasoke epitaxial lati dinku awọn idiyele R&D alabara.

Lakotan

SiC (silicon carbide) awọn sobusitireti irugbin kristali, gẹgẹbi ohun elo imusese, n ṣe atunṣe awọn ẹwọn ile-iṣẹ agbaye nipasẹ awọn aṣeyọri ni idagbasoke gara, iṣakoso abawọn, ati isọpọ oriṣiriṣi. Nipa lilọsiwaju idinku abawọn wafer nigbagbogbo, igbejade iṣelọpọ 8-inch, ati awọn iru ẹrọ heteroepitaxial ti o gbooro (fun apẹẹrẹ, SiC-on-Diamond), XKH fi igbẹkẹle-giga, awọn solusan idiyele-doko fun optoelectronics, agbara tuntun, ati iṣelọpọ ilọsiwaju. Ifaramo wa si isọdọtun ṣe idaniloju awọn alabara yorisi ni didoju erogba ati awọn eto oye, ṣiṣe wiwakọ akoko atẹle ti awọn eto ilolupo semikondokito jakejado-bandgap.