Indium Antimonide (InSb) wafers N iru P iru Epi šetan undoped Te doped tabi Ge doped 2inch 3inch 4inch sisanra Indium Antimonide (InSb) wafers
Awọn ẹya ara ẹrọ
Awọn aṣayan Doping:
1.Undoped:Awọn wafers wọnyi ni ominira lati eyikeyi awọn aṣoju doping, ṣiṣe wọn jẹ apẹrẹ fun awọn ohun elo amọja gẹgẹbi idagbasoke epitaxial.
2.Te Doped (N-Iru):Tellurium (Te) doping jẹ lilo nigbagbogbo lati ṣẹda awọn wafers iru N, eyiti o jẹ apẹrẹ fun awọn ohun elo bii awọn aṣawari infurarẹẹdi ati ẹrọ itanna iyara to gaju.
3.Ge Doped (P-Iru):Germanium (Ge) doping ti wa ni lo lati ṣẹda P-Iru wafers, laimu ga iho arinbo fun to ti ni ilọsiwaju semikondokito ohun elo.
Awọn aṣayan iwọn:
1.Available ni 2-inch, 3-inch, and 4-inch diameters. Awọn wafers wọnyi ṣaajo si awọn iwulo imọ-ẹrọ oriṣiriṣi, lati iwadii ati idagbasoke si iṣelọpọ iwọn-nla.
2.Precise awọn ifarada iwọn ila opin ti o ni idaniloju ni ibamu si awọn ipele, pẹlu awọn iwọn ila opin ti 50.8 ± 0.3mm (fun 2-inch wafers) ati 76.2 ± 0.3mm (fun 3-inch wafers).
Iṣakoso Sisanra:
1.The wafers wa pẹlu sisanra ti 500 ± 5μm fun iṣẹ ti o dara julọ ni orisirisi awọn ohun elo.
2.Additional wiwọn bi TTV (Lapapọ Sisanra Iyatọ), BOW, ati Warp ti wa ni iṣakoso daradara lati rii daju pe iṣọkan giga ati didara.
Didara Dada:
1.The wafers wá pẹlu didan / etched dada fun dara si opitika ati itanna išẹ.
2.Awọn ipele wọnyi jẹ apẹrẹ fun idagbasoke epitaxial, ti o funni ni ipilẹ ti o dara fun ṣiṣe siwaju sii ni awọn ẹrọ ti o ga julọ.
Epi-Ṣetan:
1.The InSb wafers ni o wa epi-setan, afipamo pe wọn ti wa ni iṣaaju-itọju fun awọn ilana igbasilẹ epitaxial. Eyi jẹ ki wọn jẹ apẹrẹ fun awọn ohun elo ni iṣelọpọ semikondokito nibiti awọn fẹlẹfẹlẹ epitaxial nilo lati dagba lori oke wafer.
Awọn ohun elo
1. Awọn olutọpa infurarẹẹdi:InSb wafers jẹ lilo nigbagbogbo ni wiwa infurarẹẹdi (IR), ni pataki ni iwọn infurarẹẹdi aarin-weful (MWIR). Awọn wafer wọnyi jẹ pataki fun iran alẹ, aworan igbona, ati awọn ohun elo iwoye infurarẹẹdi.
2.High-Speed Electronics:Nitori iṣipopada elekitironi giga wọn, awọn wafers InSb ni a lo ninu awọn ẹrọ itanna iyara to gaju gẹgẹbi awọn transistors igbohunsafẹfẹ giga-giga, awọn ẹrọ daradara kuatomu, ati awọn transistors arinbo elekitironi giga (HEMTs).
3.Quantum Well Devices:Bandgap dín ati arinbo elekitironi ti o dara julọ jẹ ki awọn wafers InSb dara fun lilo ninu awọn ẹrọ daradara kuatomu. Awọn ẹrọ wọnyi jẹ awọn paati bọtini ni awọn lasers, awọn aṣawari, ati awọn eto optoelectronic miiran.
4.Spintronic Awọn ẹrọ:InSb tun n ṣawari ni awọn ohun elo spintronic, nibiti a ti lo ẹrọ itanna elekitiriki fun sisẹ alaye. Isopọpọ orbit kekere ti ohun elo jẹ ki o jẹ apẹrẹ fun awọn ẹrọ iṣẹ ṣiṣe giga wọnyi.
5.Terahertz (THz) Awọn ohun elo Radiation:Awọn ẹrọ ti o da lori InSb ni a lo ni awọn ohun elo itankalẹ THz, pẹlu iwadii imọ-jinlẹ, aworan, ati isọdi ohun elo. Wọn jẹki awọn imọ-ẹrọ to ti ni ilọsiwaju bii THz spectroscopy ati awọn eto aworan THz.
6.Thermoelectric Awọn ẹrọ:Awọn ohun-ini alailẹgbẹ InSb jẹ ki o jẹ ohun elo ti o wuyi fun awọn ohun elo thermoelectric, nibiti o ti le lo lati yi ooru pada si ina daradara, paapaa ni awọn ohun elo onakan bii imọ-ẹrọ aaye tabi iran agbara ni awọn agbegbe ti o pọju.
Ọja paramita
| Paramita | 2-inch | 3-inch | 4-inch |
| Iwọn opin | 50.8 ± 0.3mm | 76.2 ± 0.3mm | - |
| Sisanra | 500± 5μm | 650± 5μm | - |
| Dada | Didan / Etched | Didan / Etched | Didan / Etched |
| Doping Iru | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) | Undoped, Te-doped (N), Ge-doped (P) |
| Iṣalaye | (100) | (100) | (100) |
| Package | Nikan | Nikan | Nikan |
| Epi-Ṣetan | Bẹẹni | Bẹẹni | Bẹẹni |
Awọn paramita Itanna fun Te Doped (N-Iru):
- Gbigbe: 2000-5000 cm²/V·s
- Resistivity: (1-1000) Ω·cm
- EPD (Iwọn iwuwo): ≤2000 abawọn/cm²
Awọn paramita Itanna fun Ge Doped (P-Iru):
- Gbigbe: 4000-8000 cm²/V·s
- Resistivity: (0.5-5) Ω·cm
- EPD (Iwọn iwuwo): ≤2000 abawọn/cm²
Ipari
Indium Antimonide (InSb) wafers jẹ ohun elo pataki fun ọpọlọpọ awọn ohun elo iṣẹ ṣiṣe giga ni awọn aaye ti ẹrọ itanna, optoelectronics, ati awọn imọ-ẹrọ infurarẹẹdi. Pẹlu iṣipopada elekitironi wọn ti o dara julọ, isọpọ iyipo-orbit kekere, ati ọpọlọpọ awọn aṣayan doping (Te for N-type, Ge for P-type), InSb wafers jẹ apẹrẹ fun lilo ninu awọn ẹrọ bii awọn aṣawari infurarẹẹdi, awọn transistors iyara to gaju, awọn ẹrọ daradara kuatomu, ati awọn ẹrọ spintronic.
Awọn wafers wa ni awọn titobi oriṣiriṣi (2-inch, 3-inch, ati 4-inch), pẹlu iṣakoso sisanra deede ati awọn ipele ti o ti ṣetan, ni idaniloju pe wọn pade awọn ibeere lile ti iṣelọpọ semikondokito ode oni. Awọn wafer wọnyi jẹ pipe fun awọn ohun elo ni awọn aaye bii wiwa IR, ẹrọ itanna iyara, ati itankalẹ THz, ti n mu awọn imọ-ẹrọ to ti ni ilọsiwaju ṣiṣẹ ni iwadii, ile-iṣẹ, ati aabo.
Alaye aworan atọka
