LiTaO3 Lithium Tantalate Ingots pẹlu Fe/Mg Doping Adani 4inch 6inch 8inch fun Imọran Ile-iṣẹ

LiTaO3 Lithium Tantalate Ingots pẹlu Fe/Mg Doping ti a ṣe adani 4inch 6inch 8inch fun Aworan Ti a Fihan Imọran Iṣẹ

Apejuwe kukuru:

LiTaO3 Ingots (Lithium Tantalate Ingots), bi awọn ohun elo mojuto fun iran-kẹta jakejado-bandgap semikondokito ati optoelectronics, lègbárùkùti wọn ga Curie otutu (607)°C), iwọn iṣipaya gbooro (400–5,200 nm), olùsọdipúpọ elekitiromechanical to dara julọ (Kt²> 15%), ati pipadanu dielectric kekere (tanδ <2%) lati yi awọn ibaraẹnisọrọ 5G pada, iṣiro kuatomu, ati isọpọ photonic. Nipasẹ awọn imọ-ẹrọ iṣelọpọ to ti ni ilọsiwaju gẹgẹbi gbigbe ọkọ oju-ofurufu ti ara (PVT) ati isọdi eefin kemikali (CVD), a pese X/Y/Z-cut, 42°Y-cut, ati lorekore poled (PPLT) ingots ni 3–8-inch ni pato, ti o nfihan iwuwo micropipe <0.1 cm⁻² ati iwuwo dislocation <5000 cm. Awọn iṣẹ wa pẹlu Fe/Mg doping, awọn itọsọna igbi paṣipaarọ proton, ati isọpọ oriṣiriṣi oriṣiriṣi silikoni (POI), ti n ba sọrọ awọn asẹ opiti iṣẹ giga, awọn orisun ina kuatomu, ati awọn aṣawari infurarẹẹdi. Ohun elo yii ṣe awakọ awọn aṣeyọri ni miniaturization, iṣẹ-igbohunsafẹfẹ giga, ati iduroṣinṣin gbona, isare fidipo ile ati ilọsiwaju imọ-ẹrọ.

Fi imeeli ranṣẹ si wa

Awọn ẹya ara ẹrọ

Imọ paramita

Sipesifikesonu	Aṣa	Ga konge
Awọn ohun elo	LiTaO3 (LT) / LiNbO3 wafers	LiTaO3 (LT) / LiNbO3 wafers
Iṣalaye	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Ni afiwe	30″	10 ''
Papẹndikula	10′	5'
dada Quality	40/20	20/10
Wavefront Distortion	λ/4@632nm	λ/8 @ 632nm
Dada Flatness	λ/4@632nm	λ/8 @ 632nm
Ko Iho	> 90%	> 90%
Chamfer	<0.2×45°	<0.2×45°
Sisanra / Ifarada Ifarada	± 0,1 mm	± 0,1 mm
O pọju iwọn	dia150× 50mm	dia150× 50mm

Awọn iṣẹ XKH

1. Nla-Sele Ingot Fabricationo

Iwọn ati Ige: Awọn ingots 3-8-inch pẹlu X/Y/Z-ge, 42°Y-ge, ati awọn gige igun aṣa (± 0.01 ° ifarada).

Iṣakoso Doping: Fe/Mg àjọ-doping nipasẹ ọna Czochralski (iwọn ifọkansi 10¹⁶–10¹⁹ cm⁻³) lati jẹ ki resistance refractive ati imuduro igbona pọ si.

2. Awọn Imọ-ẹrọ Ilana Ilọsiwajuo

Isopọpọ orisirisi: Silicon-based LiTaO3 composite wafers (POI) pẹlu iṣakoso sisanra (300-600 nm) ati imudani ti o gbona to 8.78 W / m · K fun awọn asẹ SAW-igbohunsafẹfẹ.

Ṣiṣẹda Waveguide: Paṣipaarọ Proton (PE) ati awọn ilana paṣipaarọ proton (RPE), iyọrisi awọn itọsọna igbi submicron (Δn> 0.7) fun awọn oluyipada elekitiro-opiki iyara giga (bandwidth> 40 GHz).

3. Awọn ọna iṣakoso Didara

Idanwo Ipari-si-Ipari: Raman spectroscopy (ijẹrisi polytype), XRD (crystallinity), AFM (morphology dada), ati idanwo aṣọ-iṣọkan opitika (Δn <5 × 10⁻).

4. Atilẹyin pq Ipese Agbaye

Agbara iṣelọpọ: Iṣẹjade oṣooṣu> 5,000 ingots (8-inch: 70%), atilẹyin ifijiṣẹ pajawiri 48-wakati.

Nẹtiwọọki Awọn eekaderi: Ibora ni Yuroopu, Ariwa America, ati Asia-Pacific nipasẹ ọkọ oju-omi afẹfẹ / okun pẹlu iṣakojọpọ iṣakoso iwọn otutu.

5. Imọ Co-Idagbasoke

Awọn ile-iṣẹ R&D Ijọpọ: Ṣe ifowosowopo lori awọn iru ẹrọ isọpọ photonic (fun apẹẹrẹ, SiO2 isọdi-pipadanu kekere).

Lakotan

LiTaO3 Ingots ṣiṣẹ bi awọn ohun elo ilana ti n ṣe atunṣe optoelectronics ati awọn imọ-ẹrọ kuatomu. Nipasẹ awọn imotuntun ni idagbasoke kristali (fun apẹẹrẹ, PVT), idinku abawọn, ati isọpọ oriṣiriṣi (fun apẹẹrẹ, POI), a ṣe jiṣẹ igbẹkẹle-giga, awọn solusan idiyele-doko fun awọn ibaraẹnisọrọ 5G/6G, iṣiro kuatomu, ati IoT ile-iṣẹ. Ifaramo XKH si ilọsiwaju idinku abawọn ingot ati igbejade iṣelọpọ 8-inch ṣe idaniloju awọn alabara yorisi ni awọn ẹwọn ipese agbaye, n wakọ akoko atẹle ti awọn eto ilolupo semikondokito jakejado-bandgap.