N-Iru SiC lori Si Composite Substrates Dia6inch

N-Iru SiC lori Si Composite Sobsitireti Dia6inch Ifihan Aworan

Apejuwe kukuru:

N-Iru SiC lori awọn sobusitireti akojọpọ Si jẹ awọn ohun elo semikondokito ti o ni Layer ti n-Iru silikoni carbide (SiC) ti a fi silẹ sori sobusitireti ohun alumọni (Si).

Fi imeeli ranṣẹ si wa

Alaye ọja

ọja Tags

等级Ipele	U	P级	D级
	Iwọn BPD kekere	Ipele iṣelọpọ	Idiwon ite
直径Iwọn opin	150,0 mm ± 0.25mm
厚度Sisanra	500 μm± 25μm
晶片方向Wafer Iṣalaye	Pa axis: 4.0° si <11-20> ± 0.5°fun 4H-N Lori ipo: <0001>±0.5°fun 4H-SI
主定位边方向Alapin akọkọ	{10-10}±5.0°
主定位边长度Primary Flat Gigun	47,5 mm ± 2,5 mm
边缘Iyasoto eti	3 mm
总厚度变化/弯曲度/翘曲度 TTV/ Teriba / Warp	≤15μm /≤40μm /≤60μm
微管密度和基面位错MPD&BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Resistivity	≥1E5 Ω·cm
表面粗糙度Irora	Polish Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Ko si		Ipari akojo ≤10mm, ipari kan≤2mm
Awọn dojuijako nipasẹ ina kikankikan giga
六方空洞（强光灯观测）*	Agbegbe akojọpọ ≤1%		Agbegbe akojọpọ ≤5%
Hex Plates nipasẹ ina kikankikan giga
多型(强光灯观测)*	Ko si		Agbegbe akojọpọ≤5%
Awọn agbegbe Polytype nipasẹ ina kikankikan giga
划痕(强光灯观测)*&	3 scratches to 1× wafer opin		5 scratches to 1× wafer opin
Scratches nipasẹ ina kikankikan giga	akojo ipari		akojo ipari
崩边# Chip eti	Ko si		5 laaye, ≤1 mm kọọkan
表面污染物（强光灯观测）	Ko si
Idoti nipasẹ ina kikankikan giga