Ileru Idagbasoke SiC Ingot fun Awọn ọna SiC Crystal TSSG/LPE-Diameter
Ilana Ṣiṣẹ
Ilana ipilẹ ti idagbasoke ohun alumọni carbide ingot olomi-mimọ pẹlu itu awọn ohun elo aise SiC mimọ-giga ni awọn irin didà (fun apẹẹrẹ, Si, Cr) ni 1800-2100 ° C lati ṣe agbekalẹ awọn ojutu ti o kun, atẹle nipasẹ idagbasoke itọsọna iṣakoso ti awọn kirisita SiC ẹyọkan lori awọn kirisita irugbin nipasẹ iwọn otutu kongẹ ati ilana ilana supersaturation. Imọ-ẹrọ yii dara ni pataki fun iṣelọpọ mimọ-giga (> 99.9995%) 4H/6H-SiC awọn kirisita ẹyọkan pẹlu iwuwo abawọn kekere (<100/cm²), ipade awọn ibeere sobusitireti stringent fun ẹrọ itanna agbara ati awọn ẹrọ RF. Eto idagbasoke ipele-omi jẹ ki iṣakoso kongẹ ti iru ifọkasi kirisita (Iru N/P) ati resistivity nipasẹ akopọ ojutu iṣapeye ati awọn aye idagbasoke.
Awọn eroja mojuto
1. Eto Crucible Pataki: Grafite ti o ga julọ / tantalum composite crucible, resistance otutu> 2200 ° C, sooro si ibajẹ yo SiC.
2. Olona-agbegbe Alapapo System: Apapo resistance / induction alapapo pẹlu otutu iṣakoso išedede ti ± 0.5 ° C (1800-2100 ° C ibiti o).
3. Eto Iṣipopada Itọkasi: Iṣakoso pipade-meji meji fun yiyi irugbin (0-50rpm) ati gbigbe (0.1-10mm / h).
4. Eto Iṣakoso Oju-aye: Idaabobo argon / nitrogen ti o ga julọ, titẹ agbara ti o ṣatunṣe (0.1-1atm).
5. Ni oye Iṣakoso System: PLC + ise PC laiṣe Iṣakoso pẹlu gidi-akoko idagbasoke wiwo monitoring.
6. Eto Itutu agbaiye ti o dara: Iwọn itutu agba omi ti o ni iwọn ṣe idaniloju iṣẹ iduroṣinṣin igba pipẹ.
TSSG vs LPE lafiwe
| Awọn abuda | Ọna TSSG | Ọna LPE |
| Igba otutu | 2000-2100°C | 1500-1800°C |
| Iwọn Idagba | 0.2-1mm / h | 5-50μm/h |
| Crystal Iwon | 4-8 inch ingots | 50-500μm epi-Layer |
| Ohun elo akọkọ | Igbaradi sobusitireti | Agbara ẹrọ epi-fẹlẹfẹlẹ |
| Àìpé Àìpé | <500/cm² | <100/cm² |
| Awọn Polytypes ti o yẹ | 4H/6H-SiC | 4H / 3C-SiC |
Awọn ohun elo bọtini
1. Awọn itanna agbara: 6-inch 4H-SiC sobsitireti fun 1200V + MOSFETs / diodes.
2. 5G RF Awọn ẹrọ: Ologbele-idabobo SiC sobsitireti fun mimọ ibudo PAs.
3. EV Awọn ohun elo: Ultra-nipọn (> 200μm) epi-layers fun Oko-ite modulu.
4. Awọn oluyipada PV: Awọn sobusitireti alaiṣe-kekere ti n muu ṣiṣẹ> 99% ṣiṣe iyipada.
Awọn anfani pataki
1. Imọ Superiority
1.1 Ese Olona-ọna Design
Eto idagbasoke SiC ingot olomi-omi yii ni imotuntun darapọ TSSG ati awọn imọ-ẹrọ idagbasoke gara LPE. Eto TSSG n gba idagbasoke ojutu ti irugbin oke pẹlu convection yo kongẹ ati iṣakoso iwọn otutu (ΔT≤5 ℃ / cm), ti n mu idagbasoke iduroṣinṣin ti 4-8 inch iwọn ila opin SiC ingots pẹlu awọn eso-ṣiṣe kan ti 15-20kg fun awọn kirisita 6H/4H-SiC. Eto LPE naa nlo ohun elo idasile iṣapeye (eto Si-Cr alloy) ati iṣakoso supersaturation (± 1%) lati dagba awọn ipele epitaxial ti o nipọn to gaju pẹlu iwuwo abawọn <100/cm² ni awọn iwọn otutu kekere ti o jo (1500-1800℃).
1.2 Oye Iṣakoso System
Ni ipese pẹlu iṣakoso idagbasoke ọlọgbọn ti iran 4 ti o ni ifihan:
• Abojuto ọpọlọpọ-spekitira inu-ipo (iwọn gigun gigun 400-2500nm)
• Wiwa ipele yo ti o da lesa (± 0.01mm konge)
• CCD-orisun iwọn ila opin iṣakoso-lupu iṣakoso (<± 1mm fluctuation)
• Iṣapewọn paramita idagbasoke ti agbara AI (15% fifipamọ agbara)
2. Awọn anfani Iṣẹ ṣiṣe ilana
2.1 TSSG Ọna mojuto Agbara
• Agbara nla: Atilẹyin titi di 8-inch idagbasoke garawa pẹlu> 99.5% isokan iwọn ila opin
• Kristalinti ti o ga julọ: iwuwo yiyọ kuro <500/cm², iwuwo micropipe <5/cm²
• Isokan doping: <8% n-Iru resistivity iyatọ (4-inch wafers)
• Iwọn idagbasoke ti o dara julọ: Atunṣe 0.3-1.2mm / h, 3-5 × yiyara ju awọn ọna igba otutu
2.2 LPE Ọna mojuto Agbara
• Apọju alaibawọn kekere: iwuwo ipo wiwo <1×10¹¹cm⁻²·eV⁻¹
• Iṣakoso sisanra to tọ: 50-500μm epi-layers pẹlu <± 2% iyatọ sisanra
Iṣiṣe otutu-kekere: 300-500 ℃ kekere ju awọn ilana CVD
• Idagba eto eka: Ṣe atilẹyin awọn isunmọ pn, superlatices, ati bẹbẹ lọ.
3. Awọn anfani Ṣiṣe iṣelọpọ iṣelọpọ
3.1 Iṣakoso iye owo
• 85% iṣamulo ohun elo aise (la. 60% mora)
Lilo agbara kekere 40% (fiwera si HVPE)
• 90% akoko ohun elo (apẹrẹ modular dinku akoko idinku)
3.2 Didara idaniloju
• 6σ iṣakoso ilana (CPK>1.67)
• Wiwa abawọn ori ayelujara (ipinnu 0.1μm)
• Itọpa data ilana-kikun (2000+ awọn aye-akoko gidi)
3.3 Scalability
• Ni ibamu pẹlu 4H/6H/3C polytypes
• Upgradeable to 12-inch ilana modulu
• Ṣe atilẹyin SiC/GaN hetero-integration
4. Industry elo Anfani
4.1 Awọn ẹrọ agbara
• Awọn sobusitireti kekere-resistivity (0.015-0.025Ω · cm) fun awọn ẹrọ 1200-3300V
• Awọn sobusitireti idabobo ologbele (> 10⁸Ω · cm) fun awọn ohun elo RF
4.2 Nyoju Technologies
• Ibaraẹnisọrọ kuatomu: Awọn sobusitireti ariwo-kekere (1/f ariwo<-120dB)
• Awọn agbegbe ti o pọju: Awọn kirisita ti ko ni ipanilara (<5% ibajẹ lẹhin 1×10¹⁶n/cm² itanna)
Awọn iṣẹ XKH
1. Awọn ohun elo ti a ṣe adani: Awọn atunto eto TSSG / LPE ti a ṣe.
2. Ikẹkọ Ilana: Awọn eto ikẹkọ imọ-ẹrọ ti o pọju.
3. Lẹhin-tita Support: 24/7 esi imọ-ẹrọ ati itọju.
4. Awọn Solusan Turnkey: Iṣẹ-kikun-kikun lati fifi sori ẹrọ si ilana afọwọsi.
5. Ohun elo Ipese: 2-12 inch SiC sobsitireti / epi-wafers wa.
Awọn anfani pataki pẹlu:
• Up to 8-inch gara idagbasoke agbara.
• Isokan Resistivity <0.5%.
• Akoko ohun elo> 95%.
• 24/7 imọ support.
