SiC
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Sílíkónì Carbide (SiC) Sẹ́ẹ̀tì Kírísítàlì Kanṣoṣo – Wáfẹ́rì 10×10mm
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Ìwọ̀n ìwẹ̀ 4H-N HPSI SiC 6H-N 6H-P 3C-N SiC Ìwọ̀n ìwẹ̀ 4H-N HPSI 6H-N 6H-P 3C-N SiC Ìwọ̀n ìwẹ̀ 3C-N fún MOS tàbí SBD
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Wafer Epitaxial SiC fun Awọn Ẹrọ Agbara - 4H-SiC, Iru N, Iwọn Ailagbara Kekere
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4H-N Iru SiC Epitaxial Wafer High Foliteji High Frequency
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Ìmọ́tótó Gíga 3 inches (Kò tíì sí ìdàpọ̀) Àwọn Wafers Silikoni Carbide Semi-Insulating Sic Substrates (HPSl)
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4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Ipele iwadi 500um sisanra
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4H-N/6H-N SiC Wafer Research production Dummy grade Dia150mm Silicon carbide substrate
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Wafer tí a fi aṣọ bo, Sapphire wafer, silicon wafer, SiC wafer, 2inch 4inch 6inch, Simpleness tí a fi wúrà bo 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-ologbele 6H-ologbele 4H-P 6H-P 3C iru 2inch 3inch 4inch 6inch 8inch
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Sẹ́ẹ̀tì Sic silicon carbide 2 inch 6H-N Iru 0.33mm 0.43mm didan apa meji Agbara imú ooru giga Agbara kekere
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Sọ́bìtì SiC 3inch 350um sisanra HPSI iru Prime Grade Dummy grade
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Silikoni Carbide SiC Ingot 6inch N type Dummy/prime grade thickness le ba ti a ṣe adani