Ohun alumọni carbide resistance gun ileru gara ti ndagba 6/8/12inch SiC ingot gara PVT ọna
Ilana iṣẹ:
1. Aise ohun elo ikojọpọ: ga ti nw SiC lulú (tabi Àkọsílẹ) gbe ni isalẹ ti lẹẹdi crucible (ga otutu agbegbe).
2. Ayika igbale/inert: igbale iyẹwu ileru (<10⁻³ mbar) tabi kọja gaasi inert (Ar).
3. Sublimation otutu ti o ga: alapapo resistance si 2000 ~ 2500 ℃, SiC decomposition sinu Si, Si₂C, SiC₂ ati awọn paati alakoso gaasi miiran.
4. Gbigbe alakoso gaasi: iwọn otutu ti n ṣaakiri itankale ohun elo alakoso gaasi si agbegbe iwọn otutu kekere (opin irugbin).
5. Idagba Crystal: Ipele gaasi tun ṣe atunṣe lori oju ti Irugbin Crystal ati ki o dagba ni itọsọna itọnisọna pẹlu C-axis tabi A-axis.
Awọn paramita bọtini:
1. Iwọn iwọn otutu: 20 ~ 50 ℃ / cm (iwọn iṣakoso iṣakoso ati iwuwo abawọn).
2. Ipa: 1 ~ 100mbar (titẹ kekere lati dinku isọpọ aimọ).
3.Growth oṣuwọn: 0.1 ~ 1mm / h (ni ipa didara gara ati ṣiṣe iṣelọpọ).
Awọn ẹya akọkọ:
(1) Crystal didara
iwuwo abawọn kekere: iwuwo microtubule <1 cm⁻², iwuwo dislocation 10³ ~ 10⁴ cm⁻² (nipasẹ iṣapeye irugbin ati iṣakoso ilana).
Iṣakoso iru Polycrystalline: le dagba 4H-SiC (akọkọ), 6H-SiC, ipin 4H-SiC> 90% (nilo lati ṣakoso deede iwọn otutu iwọn otutu ati gaasi ipele stoichiometric ratio).
(2) Išẹ ẹrọ
Iduroṣinṣin iwọn otutu: iwọn otutu ara graphite> 2500 ℃, ara ileru gba apẹrẹ idabobo ọpọ-Layer (gẹgẹbi rilara graphite + jaketi tutu omi).
Iṣakoso isokan: Axial / radial otutu sokesile ti ± 5 ° C rii daju aitasera iwọn ila opin gara (6-inch sobusitireti iyapa <5%).
Iwọn ti adaṣe: Eto iṣakoso PLC ti a ṣepọ, ibojuwo akoko gidi ti iwọn otutu, titẹ ati oṣuwọn idagbasoke.
(3) Awọn anfani imọ-ẹrọ
Lilo ohun elo giga: oṣuwọn iyipada ohun elo aise> 70% (dara ju ọna CVD lọ).
Ibamu iwọn nla: iṣelọpọ ibi-6-inch ti waye, 8-inch wa ni ipele idagbasoke.
(4) Lilo agbara ati iye owo
Lilo agbara ti ileru kan jẹ 300 ~ 800kW · h, ṣiṣe iṣiro fun 40% ~ 60% ti idiyele iṣelọpọ ti sobusitireti SiC.
Idoko-owo ohun elo jẹ giga (1.5M 3M fun ẹyọkan), ṣugbọn idiyele sobusitireti ẹyọkan kere ju ọna CVD lọ.
Awọn ohun elo pataki:
1. Awọn ẹrọ itanna agbara: SiC MOSFET sobusitireti fun oluyipada ọkọ ayọkẹlẹ ina ati oluyipada fọtovoltaic.
2. Rf awọn ẹrọ: 5G mimọ ibudo GaN-on-SiC epitaxial sobusitireti (paapa 4H-SiC).
3. Awọn ẹrọ ayika to gaju: iwọn otutu giga ati awọn sensọ titẹ giga fun afẹfẹ afẹfẹ ati ohun elo agbara iparun.
Awọn paramita imọ-ẹrọ:
Sipesifikesonu | Awọn alaye |
Awọn iwọn (L × W × H) | 2500 × 2400 × 3456 mm tabi ṣe akanṣe |
Crucible Opin | 900 mm |
Gbẹhin Igbale Ipa | 6 × 10⁻ Pa (lẹhin wakati 1.5 ti igbale) |
Oṣuwọn jijo | ≤5 Pa/12h (yan-jade) |
Yiyi ọpa Iwọn | 50 mm |
Iyara Yiyi | 0,5-5 rpm |
Alapapo Ọna | Alapapo ina resistance |
O pọju ileru otutu | 2500°C |
Alapapo Agbara | 40 kW × 2 × 20 kW |
Iwọn Iwọn otutu | Pyrometer infurarẹẹdi awọ meji |
Iwọn otutu | 900-3000°C |
Yiye iwọn otutu | ±1°C |
Ibiti titẹ | 1-700 mbar |
Titẹ Iṣakoso Yiye | 1-10 mbar: ± 0.5% FS; 10-100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS |
Isẹ Iru | Ikojọpọ isalẹ, awọn aṣayan afọwọṣe / adaṣe adaṣe |
iyan Awọn ẹya ara ẹrọ | Iwọn iwọn otutu meji, awọn agbegbe alapapo pupọ |
Awọn iṣẹ XKH:
XKH n pese gbogbo iṣẹ ilana ti ileru SiC PVT, pẹlu isọdi ohun elo (apẹrẹ aaye gbona, iṣakoso laifọwọyi), idagbasoke ilana (iṣakoso apẹrẹ kirisita, iṣapeye abawọn), ikẹkọ imọ-ẹrọ (isẹ ati itọju) ati atilẹyin lẹhin-tita (awọn apakan graphite rirọpo, isọdọtun aaye gbona) lati ṣe iranlọwọ fun awọn alabara lati ṣaṣeyọri iṣelọpọ ibi-giga giga sic gara. A tun pese awọn iṣẹ iṣagbega ilana lati ni ilọsiwaju nigbagbogbo ikore gara ati ṣiṣe idagbasoke, pẹlu akoko adari aṣoju ti awọn oṣu 3-6.
Alaye aworan atọka


