Ohun alumọni Carbide (SiC) Nikan-Crystal Sobusitireti – 10× 10mm Wafer

Apejuwe kukuru:

10 × 10mm Silicon Carbide (SiC) wafer sobusitireti ẹyọkan jẹ ohun elo semikondokito iṣẹ ṣiṣe giga ti a ṣe apẹrẹ fun awọn ẹrọ itanna agbara atẹle ati awọn ohun elo optoelectronic. Ti n ṣe afihan adaṣe igbona alailẹgbẹ, bandgap jakejado, ati iduroṣinṣin kemikali to dara julọ, awọn sobusitireti SiC pese ipilẹ fun awọn ẹrọ ti o ṣiṣẹ daradara labẹ iwọn otutu giga, igbohunsafẹfẹ giga, ati awọn ipo foliteji giga. Awọn sobusitireti wọnyi jẹ pipe-ge sinu awọn eerun onigun mẹrin 10 × 10mm, apẹrẹ fun iwadii, ṣiṣe apẹẹrẹ, ati iṣelọpọ ẹrọ.


Awọn ẹya ara ẹrọ

Alaye aworan atọka ti Silicon Carbide (SiC) wafer sobusitireti

Akopọ ti Silicon Carbide (SiC) wafer sobusitireti

Awọn10× 10mm Silicon Carbide (SiC) nikan-gara sobusitireti waferjẹ ohun elo semikondokito iṣẹ-giga ti a ṣe apẹrẹ fun ẹrọ itanna agbara iran atẹle ati awọn ohun elo optoelectronic. Ifihan ifarapa igbona ti o yatọ, bandgap jakejado, ati iduroṣinṣin kemikali to dara julọ, Silicon Carbide (SiC) wafer sobusitireti pese ipilẹ fun awọn ẹrọ ti o ṣiṣẹ daradara labẹ iwọn otutu giga, igbohunsafẹfẹ giga, ati awọn ipo foliteji giga. Awọn sobusitireti wọnyi jẹ pipe-ge sinu10× 10mm square awọn eerun, apẹrẹ fun iwadi, prototyping, ati ẹrọ iṣelọpọ.

Ilana iṣelọpọ ti Silicon Carbide (SiC) wafer sobusitireti

Silicon Carbide (SiC) wafer sobusitireti jẹ iṣelọpọ nipasẹ Irin-ajo Vapor Ti ara (PVT) tabi awọn ọna idagbasoke sublimation. Ilana naa bẹrẹ pẹlu SiC lulú mimọ-giga ti a kojọpọ sinu crucible lẹẹdi kan. Labẹ awọn iwọn otutu ti o pọ ju 2,000°C ati agbegbe iṣakoso, lulú naa lọ silẹ sinu oru ati tun-idogo sori kristali irugbin ti o farabalẹ, ti o dagba nla kan, abawọn-dinku awọn ingot gara kan.

Ni kete ti boule SiC ti dagba, o gba:

    • Pipin ingot: Awọn ayùn okun waya diamond pipe ge ingot SiC sinu wafers tabi awọn eerun igi.

 

    • Lapping ati lilọ: Awọn oju ti wa ni fifẹ lati yọ awọn ami ri kuro ati ṣaṣeyọri sisanra aṣọ kan.

 

    • Kemikali Mechanical Polishing (CMP): Ṣe aṣeyọri ipari digi kan ti o ti ṣetan pẹlu aijẹ dada ti o kere pupọ.

 

    • Doping iyan: Nitrogen, aluminiomu, tabi boron doping ni a le ṣe agbekalẹ lati ṣe deede awọn ohun-ini itanna (n-type tabi p-type).

 

    • Ayewo didara: metrology ti ilọsiwaju ṣe idaniloju filati wafer, iṣọkan sisanra, ati iwuwo abawọn pade awọn ibeere ipele semikondokito stringent.

Ilana igbesẹ-pupọ yii ṣe abajade ni 10 × 10mm Silicon Carbide (SiC) awọn eerun wafer sobusitireti ti o lagbara ti o ti ṣetan fun idagbasoke epitaxial tabi iṣelọpọ ẹrọ taara.

Awọn abuda ohun elo ti Silicon Carbide (SiC) wafer sobusitireti

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Silicon Carbide (SiC) wafer sobusitireti jẹ nipataki ṣe ti4H-SiC or 6H-SiCawọn oniruuru:

  • 4H-SiC:Awọn ẹya ara ẹrọ arinbo elekitironi giga, ṣiṣe ni apẹrẹ fun awọn ẹrọ agbara bii MOSFETs ati awọn diodes Schottky.

  • 6H-SiC:Nfunni awọn ohun-ini alailẹgbẹ fun RF ati awọn paati optoelectronic.

Awọn ohun-ini ti ara bọtini ti Silicon Carbide (SiC) wafer sobusitireti:

  • Ààfin tó gbòòrò:~ 3.26 eV (4H-SiC) - jẹ ki foliteji didenukole giga ati awọn adanu iyipada kekere.

  • Imudara igbona:3-4.9 W / cm · K - npa ooru kuro ni imunadoko, ni idaniloju iduroṣinṣin ni awọn ọna ṣiṣe agbara-giga.

  • Lile:~ 9.2 lori iwọnwọn Mohs - ṣe idaniloju agbara ẹrọ lakoko sisẹ ati iṣẹ ẹrọ.

Awọn ohun elo ti Silicon Carbide (SiC) wafer sobusitireti

Iyipada ti Silicon Carbide (SiC) wafer sobusitireti jẹ ki wọn niyelori kọja awọn ile-iṣẹ lọpọlọpọ:

Itanna Agbara: Ipilẹ fun MOSFETs, IGBTs, ati Schottky diodes ti a lo ninu awọn ọkọ ina (EVs), awọn ipese agbara ile-iṣẹ, ati awọn oluyipada agbara isọdọtun.

RF & Awọn ẹrọ Makirowefu: Ṣe atilẹyin awọn transistors, amplifiers, ati awọn paati radar fun 5G, satẹlaiti, ati awọn ohun elo aabo.

Optoelectronics: Ti a lo ninu Awọn LED UV, awọn olutọpa fọto, ati awọn diodes laser nibiti akoyawo UV giga ati iduroṣinṣin ṣe pataki.

Aerospace & Aabo: Sobusitireti ti o gbẹkẹle fun iwọn otutu giga, itanna-lile itankalẹ.

Awọn ile-iṣẹ Iwadi & Awọn ile-ẹkọ giga: Apẹrẹ fun awọn ẹkọ imọ-jinlẹ ohun elo, idagbasoke ẹrọ apẹrẹ, ati idanwo awọn ilana apọju tuntun.

Ni pato fun Silicon Carbide (SiC) sobusitireti wafer Chips

Ohun ini Iye
Iwọn 10mm × 10mm onigun mẹrin
Sisanra 330-500 μm (ṣe asefara)
Polytype 4H-SiC tabi 6H-SiC
Iṣalaye C-ofurufu, ita-apa (0°/4°)
Dada Ipari Nikan-ẹgbẹ tabi ni ilopo-ẹgbẹ didan; epi-setan wa
Awọn aṣayan Doping N-iru tabi P-iru
Ipele Iwadi ite tabi ẹrọ ite

FAQ of Silicon Carbide (SiC) wafer sobusitireti

Q1: Kini o jẹ ki Silicon Carbide (SiC) sobusitireti wafer ga ju awọn wafer ohun alumọni ti aṣa?
SiC nfun 10 × ti o ga didenukole aaye agbara, superior ooru resistance, ati kekere iyipada adanu, ṣiṣe awọn ti o apẹrẹ fun ga-ṣiṣe, ga-agbara awọn ẹrọ ti silikoni ko le ṣe atilẹyin.

Q2: Njẹ 10 × 10mm Silicon Carbide (SiC) wafer sobusitireti ti wa ni ipese pẹlu awọn fẹlẹfẹlẹ epitaxial?
Bẹẹni. A pese awọn sobusitireti ti o ti ṣetan-epi ati pe o le fi wafers pẹlu awọn fẹlẹfẹlẹ epitaxial aṣa lati pade ẹrọ agbara kan pato tabi awọn iwulo iṣelọpọ LED.

Q3: Ṣe awọn iwọn aṣa ati awọn ipele doping wa?
Nitootọ. Lakoko ti awọn eerun igi 10 × 10mm jẹ boṣewa fun iwadii ati iṣapẹẹrẹ ẹrọ, awọn iwọn aṣa, sisanra, ati awọn profaili doping wa lori ibeere.

Q4: Bawo ni awọn wafers wọnyi ṣe duro ni awọn agbegbe to gaju?
SiC n ṣetọju iduroṣinṣin igbekalẹ ati iṣẹ itanna loke 600 ° C ati labẹ itankalẹ giga, ti o jẹ ki o jẹ apẹrẹ fun afẹfẹ ati ẹrọ itanna-ite ologun.

Nipa re

XKH ṣe amọja ni idagbasoke imọ-ẹrọ giga, iṣelọpọ, ati tita ti gilasi opiti pataki ati awọn ohun elo gara titun. Awọn ọja wa ṣe iranṣẹ ẹrọ itanna opiti, ẹrọ itanna olumulo, ati ologun. A nfun awọn paati opiti Sapphire, awọn ideri lẹnsi foonu alagbeka, Awọn ohun elo amọ, LT, Silicon Carbide SIC, Quartz, ati awọn wafers garawa semikondokito. Pẹlu oye oye ati ohun elo gige-eti, a tayọ ni iṣelọpọ ọja ti kii ṣe deede, ni ero lati jẹ oludari awọn ohun elo optoelectronic ile-iṣẹ giga-imọ-ẹrọ.

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