Sobusitireti
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double didan Conductive Prime Ite Mos Ite
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SiC silikoni carbide wafer SiC wafer 4H-N 6H-N HPSI (Idi mimọ ologbele-insulating giga) 4H/6H-P 3C -n iru 2 3 4 6 8inch wa
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oniyebiye ingot 3inch 4inch 6inch Monocrystal CZ KY ọna Isese
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oruka sapphire ti a ṣe ti ohun elo sapphire sintetiki Sihin ati lile Mohs asefara ti 9
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2 inch Sic siliki carbide sobusitireti 6H-N Iru 0.33mm 0.43mm didan apa-meji ti o gaju agbara ina elekitiriki kekere agbara agbara
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GaAs agbara-giga epitaxial wafer sobusitireti gallium arsenide wafer agbara igbi okun laser 905nm fun itọju iṣoogun laser
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GaAs lesa epitaxial wafer 4 inch 6 inch VCSEL inaro iho dada itujade igbi lesa igbi gigun 940nm ikorita kanṣoṣo
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2inch 3inch 4inch InP epitaxial wafer substrate APD aṣawari ina fun awọn ibaraẹnisọrọ okun opiki tabi LiDAR
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oruka oniyebiye gbogbo-sapphire ti a ṣe ni kikun lati inu oniyebiye oniyebiye ti o ṣe laabu ti o ṣe oniyebiye oniyebiye.
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Oniyebiye ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Crystal Nikan
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Oniyebiye Prism oniyebiye lẹnsi Itọye giga Al2O3 BK7 JGS1 JGS2 Ohun elo Opitika Ohun elo
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SiC sobusitireti 3inch 350um sisanra HPSI iru NOMBA Ite idinwon ite