150mm 200mm 6inch 8inch GaN lori Silicon Epi-Layer wafer Gallium nitride epitaxial wafer
Ọna iṣelọpọ
Ilana iṣelọpọ pẹlu didagba awọn ipele GaN lori sobusitireti oniyebiye kan nipa lilo awọn imudara ilọsiwaju gẹgẹbi idọti alumọni kemikali irin-Organic (MOCVD) tabi epitaxy tan ina molikula (MBE). Ilana fifisilẹ ni a ṣe labẹ awọn ipo iṣakoso lati rii daju didara gara ati fiimu aṣọ.
Awọn ohun elo 6inch GaN-On-Sapphire: Awọn eerun sobusitireti sapphire 6-inch jẹ lilo pupọ ni awọn ibaraẹnisọrọ makirowefu, awọn eto radar, imọ-ẹrọ alailowaya ati optoelectronics.
Diẹ ninu awọn ohun elo ti o wọpọ pẹlu
1. Rf agbara ampilifaya
2. LED ina ile ise
3. Awọn ẹrọ ibaraẹnisọrọ nẹtiwọki alailowaya
4. Awọn ẹrọ itanna ni iwọn otutu agbegbe
5. Optoelectronic awọn ẹrọ
ọja ni pato
- Iwọn: Iwọn sobusitireti jẹ 6 inches (nipa 150 mm).
- Didara oju: Ilẹ naa ti ni didan daradara lati pese didara digi to dara julọ.
- Sisanra: Awọn sisanra ti Layer GaN le jẹ adani ni ibamu si awọn ibeere kan pato.
- Iṣakojọpọ: Sobusitireti ti wa ni iṣọra pẹlu awọn ohun elo anti-aimi lati ṣe idiwọ ibajẹ lakoko gbigbe.
- Awọn egbegbe ipo: Sobusitireti ni awọn egbegbe aye kan pato ti o dẹrọ titete ati iṣẹ lakoko igbaradi ẹrọ.
- Awọn paramita miiran: Awọn paramita pato gẹgẹbi tinrin, resistivity ati ifọkansi doping le ṣe atunṣe ni ibamu si awọn ibeere alabara.
Pẹlu awọn ohun-ini ohun elo ti o ga julọ ati awọn ohun elo oniruuru, awọn wafers sobusitireti oniyebiye 6-inch jẹ yiyan igbẹkẹle fun idagbasoke ti awọn ẹrọ semikondokito iṣẹ-giga ni ọpọlọpọ awọn ile-iṣẹ.
| Sobusitireti | 6" 1mm <111> p-type Si | 6" 1mm <111> p-type Si |
| Epi ThickAvg | ~ 5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Teriba | +/- 45um | +/- 45um |
| Gbigbọn | <5mm | <5mm |
| Inaro BV | > 1000V | > 1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Insitu SiN fila | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Gbigbe | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Alaye aworan atọka
