4H/6H-P 6inch SiC wafer Zero MPD ite Isejade Ite idinwon
4H/6H-P Iru SiC Composite Substrates Wọpọ tabili paramita
6 inch opin Silicon Carbide (SiC) sobusitireti Sipesifikesonu
| Ipele | Odo MPD ProductionIpele (Z Ipò) | Standard ProductionIwọn (P Ipò) | Idiwon ite (D Ipò) | ||
| Iwọn opin | 145,5 mm ~ 150,0 mm | ||||
| Sisanra | 350 μm ± 25 μm | ||||
| Wafer Iṣalaye | -Offapa: 2.0°-4.0°si [1120] ± 0.5° fun 4H/6H-P, Lori ipo: 〈111〉± 0.5° fun 3C-N | ||||
| Iwuwo Micropipe | 0 cm-2 | ||||
| Resistivity | p-iru 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| n-iru 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Primary Flat Iṣalaye | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Primary Flat Gigun | 32,5 mm ± 2,0 mm | ||||
| Secondary Flat Gigun | 18,0 mm ± 2,0 mm | ||||
| Atẹle Flat Iṣalaye | Silikoni koju soke: 90° CW. lati NOMBA alapin ± 5,0 ° | ||||
| Iyasoto eti | 3 mm | 6 mm | |||
| LTV/TTV/ Teriba / Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Irora | Polish Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Eti dojuijako Nipa Ga kikankikan Light | Ko si | Akopọ gigun ≤ 10 mm, ipari kan≤2 mm | |||
| Hex farahan Nipa High kikankikan Light | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤0.1% | |||
| Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga | Ko si | Agbegbe akojọpọ≤3% | |||
| Visual Erogba Ifisi | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤3% | |||
| Silicon Surface Scratches Nipa Giga kikankikan Light | Ko si | Àkópọ̀ gígùn≤1×ìwọ̀n òpin wafer | |||
| Eti Chips Ga Nipa kikankikan Light | Ko si idasilẹ ≥0.2mm fifẹ ati ijinle | 5 laaye, ≤1 mm kọọkan | |||
| Ohun alumọni dada kontaminesonu Nipa Ga kikankikan | Ko si | ||||
| Iṣakojọpọ | Kasẹti-wafer pupọ tabi Apoti Wafer Kanṣoṣo | ||||
Awọn akọsilẹ:
※ Awọn opin awọn abawọn lo si gbogbo dada wafer ayafi fun agbegbe iyasoto eti. # Awọn idọti yẹ ki o ṣayẹwo lori Si oju o
Iru 4H/6H-P 6-inch SiC wafer pẹlu ipele Zero MPD ati iṣelọpọ tabi iwọn idinwon jẹ lilo pupọ ni awọn ohun elo itanna to ti ni ilọsiwaju. Iwa eleto gbona ti o dara julọ, foliteji didenukole giga, ati resistance si awọn agbegbe lile jẹ ki o jẹ apẹrẹ fun ẹrọ itanna agbara, gẹgẹbi awọn iyipada foliteji giga ati awọn oluyipada. Iwọn MPD Zero ṣe idaniloju awọn abawọn to kere, pataki fun awọn ohun elo igbẹkẹle-giga. Awọn wafer-iṣelọpọ ni a lo ni iṣelọpọ iwọn nla ti awọn ẹrọ agbara ati awọn ohun elo RF, nibiti iṣẹ ṣiṣe ati konge ṣe pataki. Dummy-grade wafers, ni ida keji, ni a lo fun isọdiwọn ilana, idanwo ohun elo, ati adaṣe, ṣiṣe iṣakoso didara deede ni awọn agbegbe iṣelọpọ semikondokito.
Awọn anfani ti N-type SiC composite substrates pẹlu
- Ga Gbona Conductivity: Awọn 4H / 6H-P SiC wafer daradara ti npa ooru kuro, o jẹ ki o dara fun iwọn otutu ati awọn ohun elo itanna ti o ga julọ.
- Ga didenukole Foliteji: Agbara rẹ lati mu awọn foliteji giga laisi ikuna jẹ ki o jẹ apẹrẹ fun awọn ẹrọ itanna agbara ati awọn ohun elo iyipada giga-giga.
- Odo MPD (Micro Pipe abawọn) ite: Iwọn abawọn abawọn ti o kere julọ ṣe idaniloju igbẹkẹle ti o ga julọ ati iṣẹ, pataki fun wiwa awọn ẹrọ itanna.
- Gbóògì-Ipele fun Ibi iṣelọpọ: Dara fun iṣelọpọ titobi nla ti awọn ẹrọ semikondokito iṣẹ-giga pẹlu awọn iṣedede didara okun.
- Idiwon-Ite fun Igbeyewo ati odiwọn: Nṣiṣẹ iṣapeye ilana, idanwo ohun elo, ati iṣapẹrẹ laisi lilo awọn iye owo-giga iṣelọpọ-ite wafers.
Lapapọ, 4H/6H-P 6-inch SiC wafers pẹlu iwọn Zero MPD, ipele iṣelọpọ, ati iwọn idinwon nfunni ni awọn anfani pataki fun idagbasoke awọn ẹrọ itanna to gaju. Awọn wafer wọnyi jẹ anfani paapaa ni awọn ohun elo ti o nilo iṣiṣẹ iwọn otutu giga, iwuwo agbara giga, ati iyipada agbara daradara. Iwọn MPD Zero ṣe idaniloju awọn abawọn ti o kere julọ fun iṣẹ ẹrọ ti o gbẹkẹle ati iduroṣinṣin, lakoko ti awọn wafers-iṣelọpọ ṣe atilẹyin iṣelọpọ iwọn-nla pẹlu awọn iṣakoso didara to muna. Dummy-grade wafers pese ojutu ti o munadoko-owo fun iṣapeye ilana ati isọdiwọn ohun elo, ṣiṣe wọn ṣe pataki fun iṣelọpọ semikondokito to gaju.
Alaye aworan atọka
