50.8mm 2inch GaN on oniyebiye Epi-Layer wafer
Ohun elo ti gallium nitride GaN epitaxial dì
Da lori iṣẹ ti gallium nitride, gallium nitride epitaxial chips jẹ o dara julọ fun agbara giga, igbohunsafẹfẹ giga, ati awọn ohun elo foliteji kekere.
O ṣe afihan ninu:
1) Iwọn bandgap giga: Bandgap giga ṣe ilọsiwaju ipele foliteji ti awọn ẹrọ gallium nitride ati pe o le ṣe agbara ti o ga ju awọn ẹrọ arsenide gallium, eyiti o dara julọ fun awọn ibudo ipilẹ ibaraẹnisọrọ 5G, radar ologun ati awọn aaye miiran;
2) Imudara iyipada ti o ga julọ: on-resistance ti gallium nitride yi pada awọn ẹrọ itanna agbara jẹ awọn aṣẹ 3 ti iwọn kekere ju ti awọn ohun elo ohun alumọni, eyiti o le dinku isonu ti o yipada ni pataki;
3) Imudaniloju ti o ga julọ: giga ti o ga julọ ti gallium nitride jẹ ki o ni iṣẹ ṣiṣe ti ooru ti o dara julọ, ti o dara fun iṣelọpọ agbara-giga, iwọn otutu ati awọn aaye miiran ti awọn ẹrọ;
4) Pipin agbara aaye ina mọnamọna: Botilẹjẹpe didenukole agbara aaye ina ti gallium nitride jẹ isunmọ si ti silicon nitride, nitori ilana semikondokito, aiṣedeede lattice ohun elo ati awọn ifosiwewe miiran, ifarada foliteji ti awọn ẹrọ gallium nitride nigbagbogbo jẹ nipa 1000V, ati awọn ailewu lilo foliteji jẹ maa n ni isalẹ 650V.
| Nkan | GaN-TCU-C50 | GaN-TCN-C50 | GaN-TCP-C50 |
| Awọn iwọn | e 50.8mm ± 0.1mm | ||
| Sisanra | 4,5 ± 0,5 um | 4.5 ± 0.5um | |
| Iṣalaye | C-ofurufu (0001) ± 0,5 ° | ||
| Orisi iwa | N-type (Ti ko tii silẹ) | N-type (Si-doped) | P-Iru (Mg-doped) |
| Atako(3O0K) | <0.5 Q・cm | <0.05 Q・cm | ~ 10 Q・cm |
| Ifojusi ti ngbe | <5x1017cm-3 | > 1x1018cm-3 | > 6x1016 cm-3 |
| Gbigbe | ~ 300 cm2/Vs | ~ 200 cm2/Vs | ~ 10 cm2/Vs |
| Dislocation iwuwo | O kere ju 5x108cm-2(ṣe iṣiro nipasẹ FWHMs ti XRD) | ||
| Sobusitireti be | GaN lori oniyebiye (Boṣewa: SSP Aṣayan: DSP) | ||
| Agbegbe Dada Lilo | > 90% | ||
| Package | Ti kojọpọ ni agbegbe yara mimọ 100 kan, ninu awọn kasẹti ti 25pcs tabi awọn apoti wafer ẹyọkan, labẹ bugbamu nitrogen. | ||
* Miiran sisanra le ti wa ni adani
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