6inch GaN-On- oniyebiye

Apejuwe kukuru:

150mm 6inch GaN lori Silicon/Sapphire/SiC Epi-Layer wafer Gallium nitride epitaxial wafer

Wafer sobusitireti oniyebiye 6-inch jẹ ohun elo semikondokito ti o ni agbara giga ti o ni awọn fẹlẹfẹlẹ gallium nitride (GaN) ti o dagba lori sobusitireti sapphire kan.Ohun elo naa ni awọn ohun-ini gbigbe itanna to dara julọ ati pe o jẹ apẹrẹ fun iṣelọpọ agbara-giga ati awọn ẹrọ semikondokito igbohunsafẹfẹ giga-giga.

Fi imeeli ranṣẹ si wa

Alaye ọja

ọja Tags

150mm 6inch GaN lori Silicon/Sapphire/SiC Epi-Layer wafer Gallium nitride epitaxial wafer

Ọna iṣelọpọ: Ilana iṣelọpọ pẹlu didagba awọn ipele GaN lori sobusitireti oniyebiye kan nipa lilo awọn imuposi ilọsiwaju gẹgẹbi iṣipopada oru eefin kemikali irin-Organic (MOCVD) tabi epitaxy tan ina molikula (MBE).Ilana fifisilẹ ni a ṣe labẹ awọn ipo iṣakoso lati rii daju didara gara ati fiimu aṣọ.

Awọn ohun elo 6inch GaN-On-Sapphire: Awọn eerun sobusitireti sapphire 6-inch jẹ lilo pupọ ni awọn ibaraẹnisọrọ makirowefu, awọn eto radar, imọ-ẹrọ alailowaya ati optoelectronics.

Diẹ ninu awọn ohun elo ti o wọpọ pẹlu

1. Rf agbara ampilifaya

2. LED ina ile ise

3. Awọn ẹrọ ibaraẹnisọrọ nẹtiwọki alailowaya

4. Awọn ẹrọ itanna ni iwọn otutu agbegbe

5. Optoelectronic awọn ẹrọ

ọja ni pato

- Iwọn: Iwọn sobusitireti jẹ 6 inches (nipa 150 mm).

- Didara oju: Ilẹ naa ti ni didan daradara lati pese didara digi to dara julọ.

- Sisanra: Awọn sisanra ti Layer GaN le jẹ adani ni ibamu si awọn ibeere kan pato.

- Iṣakojọpọ: Sobusitireti ti wa ni iṣọra pẹlu awọn ohun elo anti-aimi lati ṣe idiwọ ibajẹ lakoko gbigbe.

- Awọn egbegbe ipo: Sobusitireti ni awọn egbegbe aye kan pato ti o dẹrọ titete ati iṣẹ lakoko igbaradi ẹrọ.

- Awọn paramita miiran: Awọn paramita pato gẹgẹbi tinrin, resistivity ati ifọkansi doping le ṣe atunṣe ni ibamu si awọn ibeere alabara.

Pẹlu awọn ohun-ini ohun elo ti o ga julọ ati awọn ohun elo oniruuru, awọn wafers sobusitireti oniyebiye 6-inch jẹ yiyan igbẹkẹle fun idagbasoke ti awọn ẹrọ semikondokito iṣẹ-giga ni ọpọlọpọ awọn ile-iṣẹ.

Sobusitireti	6" 1mm <111> p-type Si	6" 1mm <111> p-type Si
Epi ThickAvg	~ 5um	~7um
Epi ThickUnif	<2%	<2%
Teriba	+/- 45um	+/- 45um
Gbigbọn	<5mm	<5mm
Inaro BV	> 1000V	> 1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN fila	5-60nm	5-60nm
2DEG conc.	~10¹³cm^-2	~10¹³cm^-2
Gbigbe	~2000cm²/Vs (<2%)	~2000cm²/Vs (<2%)
Rsh	<330ohm/sq (<2%)	<330ohm/sq (<2%)