p-type 4H/6H-P 3C-N TYPE SIC sobusitireti 4inch 〈111〉± 0.5°Zero MPD
4H/6H-P Iru SiC Composite Substrates Wọpọ tabili paramita
4 inch opin SilikoniCarbide (SiC) Sobusitireti Sipesifikesonu
Ipele | Odo MPD Production Ipele (Z Ipò) | Standard Production Iwọn (P Ipò) | Idiwon ite (D Ipò) | ||
Iwọn opin | 99,5 mm ~ 100,0 mm | ||||
Sisanra | 350 μm ± 25 μm | ||||
Wafer Iṣalaye | Pa apa: 2.0°-4.0° si [1120] ± 0.5° fun 4H/6H-P, On ipo: 〈111〉± 0.5 ° fun 3C-N | ||||
Iwuwo Micropipe | 0 cm-2 | ||||
Resistivity | p-iru 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
n-iru 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
Primary Flat Iṣalaye | 4H/6H-P | - {1010} ± 5.0° | |||
3C-N | - {110} ± 5.0° | ||||
Primary Flat Gigun | 32,5 mm ± 2,0 mm | ||||
Secondary Flat Gigun | 18,0 mm ± 2,0 mm | ||||
Atẹle Flat Iṣalaye | Silikoni koju soke: 90° CW. lati NOMBA alapin±5.0° | ||||
Iyasoto eti | 3 mm | 6 mm | |||
LTV/TTV/ Teriba / Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
Irora | Polish Ra≤1 nm | ||||
CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
Eti dojuijako Nipa Ga kikankikan Light | Ko si | Akopọ gigun ≤ 10 mm, ipari kan≤2 mm | |||
Hex farahan Nipa High kikankikan Light | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤0.1% | |||
Awọn agbegbe Polytype Nipa Imọlẹ Kikan Giga | Ko si | Agbegbe akojọpọ≤3% | |||
Visual Erogba Ifisi | Agbegbe akojọpọ ≤0.05% | Agbegbe akojọpọ ≤3% | |||
Silicon Surface Scratches Nipa Giga kikankikan Light | Ko si | Àkópọ̀ gígùn≤1×ìwọ̀n òpin wafer | |||
Eti Chips Ga Nipa kikankikan Light | Ko si idasilẹ ≥0.2mm fifẹ ati ijinle | 5 laaye, ≤1 mm kọọkan | |||
Ohun alumọni dada kontaminesonu Nipa Ga kikankikan | Ko si | ||||
Iṣakojọpọ | Kasẹti-wafer pupọ tabi Apoti Wafer Kanṣoṣo |
Awọn akọsilẹ:
※ Awọn opin awọn abawọn lo si gbogbo dada wafer ayafi fun agbegbe iyasoto eti. # Awọn idọti yẹ ki o ṣayẹwo lori oju Si nikan.
P-type 4H/6H-P 3C-N iru 4-inch SiC sobusitireti pẹlu 〈111〉± 0.5° Iṣalaye ati Zero MPD ite jẹ lilo pupọ ni awọn ohun elo itanna to gaju. Imudara igbona ti o dara julọ ati foliteji didenukole giga jẹ ki o jẹ apẹrẹ fun ẹrọ itanna agbara, gẹgẹbi awọn iyipada foliteji giga, awọn oluyipada, ati awọn oluyipada agbara, ti n ṣiṣẹ ni awọn ipo to gaju. Ni afikun, atako sobusitireti si awọn iwọn otutu giga ati ipata ṣe idaniloju iṣẹ iduroṣinṣin ni awọn agbegbe lile. Iṣalaye 〈111〉± 0.5° ti o tọ mu ilọsiwaju iṣelọpọ pọ si, jẹ ki o dara fun awọn ẹrọ RF ati awọn ohun elo igbohunsafẹfẹ giga, gẹgẹbi awọn eto radar ati ohun elo ibaraẹnisọrọ alailowaya.
Awọn anfani ti N-type SiC composite substrates pẹlu:
1. Imudara Imudara Ti o gaju: Imudara ooru ti o dara, ti o jẹ ki o dara fun awọn agbegbe ti o ga julọ ati awọn ohun elo agbara-giga.
2. Giga Breakdown Voltage: Ṣe idaniloju iṣẹ ti o gbẹkẹle ni awọn ohun elo giga-giga bi awọn oluyipada agbara ati awọn inverters.
3. Zero MPD (Micro Pipe Defect) Ipele: Awọn iṣeduro awọn abawọn ti o kere julọ, pese iduroṣinṣin ati igbẹkẹle giga ni awọn ẹrọ itanna pataki.
4. Ibajẹ Resistance: Ti o tọ ni awọn agbegbe ti o lagbara, ṣiṣe iṣeduro iṣẹ-igba pipẹ ni awọn ipo ti o nbeere.
5. Precise 〈111〉± 0.5 ° Iṣalaye: Faye gba deede titete lakoko iṣelọpọ, imudarasi iṣẹ ẹrọ ni igbohunsafẹfẹ giga-giga ati awọn ohun elo RF.
Iwoye, P-type 4H / 6H-P 3C-N iru 4-inch SiC sobusitireti pẹlu 〈111〉± 0.5 ° iṣalaye ati Zero MPD ite jẹ ohun elo ti o ga julọ ti o dara julọ fun awọn ohun elo itanna to ti ni ilọsiwaju. Imudara igbona ti o dara julọ ati foliteji didenukole giga jẹ ki o jẹ pipe fun ẹrọ itanna agbara bii awọn iyipada foliteji giga, awọn oluyipada, ati awọn oluyipada. Iwọn MPD Zero ṣe idaniloju awọn abawọn to kere, pese igbẹkẹle ati iduroṣinṣin ni awọn ẹrọ to ṣe pataki. Ni afikun, atako sobusitireti si ipata ati awọn iwọn otutu giga ṣe idaniloju agbara ni awọn agbegbe lile. Itọnisọna 〈111〉± 0.5 ° ti o tọ fun laaye fun titete deede lakoko iṣelọpọ, ti o jẹ ki o dara julọ fun awọn ẹrọ RF ati awọn ohun elo igbohunsafẹfẹ giga.