SiC
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SIC substrate silicon carbide prime grade diameter 300mm titobi nla 4H-N O dara fun itujade ooru ẹrọ agbara giga
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Wafer SiC silikoni carbide 8 inch 4H-N iru 0.5mm ipele iṣẹjade ipele iwadii ti a ṣe apẹrẹ didan ti aṣa
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Ìwọ̀n ìṣẹ́pọ̀ HPSI SiC:3inṣi nípọn:350um± 25 µm fún Ẹ̀rọ Agbára
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3inch mímọ́ tó ga jùlọ (HPSI) Wafer SiC 350um Dummy grade Prime grade
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P-type SiC substrate SiC wafer Dia2inch ọja tuntun
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8inch 200mm Silikoni Carbide SiC Wafers 4H-N Iru iṣelọpọ Ipele iṣelọpọ 500um sisanra
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Conductive Prime Grade Mos Grade
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Wafer 4H-SiC 12-Inch fún àwọn gíláàsì AR
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Wafer HPSI SiC ≥90% Ipele Ifiweranṣẹ Optical fun Awọn Gilasi AI/AR
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Àpò ìdọ̀tí Silikoni Carbide (SiC) Oníwẹ́ gíga fún àwọn dígí Ar
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Àwọn Wafer Epitaxial 4H-SiC fún Àwọn MOSFET Fólítìńlá Gíga Jùlọ (100–500 μm, 6 inches)
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SICOI (Silicon Carbide on Insulator) Wafers SiC Film ON Silicon