Silicon carbide diamond waya gige ẹrọ 4/6/8/12 inch SiC ingot processing

Silicon carbide Diamond wire machine cutting machine 4/6/8/12 inch SiC ingot processing Aworan Ifihan

Apejuwe kukuru:

Silicon carbide Diamond Wire Ige ẹrọ jẹ iru awọn ohun elo ti n ṣatunṣe ti o ga julọ ti a ṣe igbẹhin si silikoni carbide (SiC) ingot slice, lilo Diamond Wire Saw ọna ẹrọ, nipasẹ iyara gbigbe okun waya diamond (ila opin ila 0.1 ~ 0.3mm) si SiC ingot olona-waya gige, lati ṣe aṣeyọri giga-giga, igbaradi wafer kekere bibajẹ. Ohun elo naa ni lilo pupọ ni SiC agbara semikondokito (MOSFET / SBD), ẹrọ igbohunsafẹfẹ redio (GaN-on-SiC) ati sisẹ sobusitireti ohun elo optoelectronic, jẹ ohun elo bọtini ni pq ile-iṣẹ SiC.

Fi imeeli ranṣẹ si wa

Alaye ọja

ọja Tags

Ilana iṣẹ:

1. Ingot fixation: SiC ingot (4H / 6H-SiC) ti wa ni ipilẹ lori ipilẹ gige nipasẹ imuduro lati rii daju pe ipo deede (± 0.02mm).

2. Iṣipopada laini Diamond: laini diamond (awọn patikulu diamond elekitiroti lori dada) ti wa ni ṣiṣe nipasẹ eto kẹkẹ itọsọna fun sisanra iyara giga (iyara ila 10 ~ 30m / s).

3. Awọn kikọ sii gige: ingot ti wa ni ifunni pẹlu itọsọna ti a ṣeto, ati pe ila diamond ti ge nigbakanna pẹlu awọn ila ti o jọra pupọ (awọn ila 100 ~ 500) lati ṣe ọpọlọpọ awọn wafers.

4. Itutu ati yiyọ chirún: Sokiri coolant (omi deionized + additives) ni agbegbe gige lati dinku ibajẹ ooru ati yọ awọn eerun kuro.

Awọn paramita bọtini:

1. Iyara gige: 0.2 ~ 1.0mm / min (da lori itọnisọna gara ati sisanra ti SiC).

2. Laini ẹdọfu: 20 ~ 50N (rọrun ga ju lati fọ laini, ipa kekere ti o ni ipa gige deede).

3.Wafer sisanra: boṣewa 350 ~ 500μm, wafer le de ọdọ 100μm.

Awọn ẹya akọkọ:

(1) Ige deede
Ifarada sisanra: ± 5μm (@350μm wafer), o dara ju gige amọ-lile ti aṣa (± 20μm).

Iwaju oju: Ra <0.5μm (ko si lilọ ni afikun ti a nilo lati dinku iye sisẹ atẹle).

Oju-iwe: <10μm (din iṣoro ti didan ti o tẹle).

(2) Ṣiṣe ṣiṣe ṣiṣe
Ige ila-pupọ: gige awọn ege 100 ~ 500 ni akoko kan, npo agbara iṣelọpọ 3 ~ 5 igba (vs. Ige ila kan).

Igbesi aye laini: Laini diamond le ge 100 ~ 300km SiC (da lori lile ingot ati iṣapeye ilana).

(3) Low bibajẹ processing
Pipin eti: <15μm (ige ibile> 50μm), mu ikore wafer dara.

Layer ibaje subsurface: <5μm (din yiyọ didan ku).

(4) Idaabobo ayika ati aje
Ko si idoti amọ: Awọn idiyele idalẹnu omi idoti idinku ni akawe si gige amọ.

Lilo ohun elo: Ige pipadanu <100μm/ gige, fifipamọ awọn ohun elo aise SiC.

Ipa gige:

1. Didara Wafer: ko si awọn dojuijako macroscopic lori aaye, awọn abawọn airi diẹ (itẹsiwaju dislocation iṣakoso). Le taara tẹ ọna asopọ didan ti o ni inira, kuru ṣiṣan ilana naa.

2. Aitasera: iyapa sisanra ti wafer ni ipele jẹ <± 3%, o dara fun iṣelọpọ adaṣe.

3.Applicability: Atilẹyin 4H / 6H-SiC ingot gige, ti o ni ibamu pẹlu conductive / semi-insulated type.

Sipesifikesonu Imọ-ẹrọ:

Sipesifikesonu	Awọn alaye
Awọn iwọn (L × W × H)	2500x2300x2500 tabi ṣe akanṣe
Ilana iwọn iwọn ohun elo	4, 6, 8, 10, 12 inches ti ohun alumọni carbide
Dada roughness	Ra≤0.3u
Apapọ gige iyara	0.3mm / iseju
Iwọn	5.5t
Ige ilana eto awọn igbesẹ	≤30 igbesẹ
Ariwo ohun elo	≤80dB
Irin waya ẹdọfu	0 ~ 110N(0.25 ẹdọfu waya jẹ 45N)
Irin waya iyara	0 ~ 30m/S
Lapapọ agbara	50kw
Diamond waya opin	≥0.18mm
Ipari flatness	≤0.05mm
Ige ati fifọ oṣuwọn	≤1% (ayafi fun awọn idi eniyan, ohun elo silikoni, laini, itọju ati awọn idi miiran)

Awọn iṣẹ XKH:

XKH pese gbogbo iṣẹ ilana ti ohun alumọni carbide Diamond wire Ige ẹrọ, pẹlu yiyan ẹrọ (iwọn ila opin waya / iyara ibaramu), idagbasoke ilana (pipe paramita ti o dara ju), ipese awọn ohun elo (okun diamond, kẹkẹ itọsọna) ati atilẹyin lẹhin-tita (itọju ohun elo, gige didara didara), lati ṣe iranlọwọ fun awọn alabara lati ṣaṣeyọri ikore giga (> 95%), iye owo kekere SiC wafer ibi-gbóògì. O tun funni ni awọn iṣagbega ti a ṣe adani (gẹgẹbi gige gige ultra-tinrin, ikojọpọ adaṣe ati ikojọpọ) pẹlu akoko idari ọsẹ 4-8.