LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp fun 5G/6G Awọn ibaraẹnisọrọ
Imọ paramita
Oruko | Optical-ite LiTaO3 | Ohun tabili ipele LiTaO3 |
Axial | Z ge + / - 0,2 ° | 36 ° Y gige / 42 ° Y gige / X ge (+ / - 0.2 °) |
Iwọn opin | 76.2mm + / - 0.3mm/ 100 ± 0.2mm | 76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150± 0.5mm |
Datum ofurufu | 22mm + / - 2mm | 22mm + /-2mm 32mm + /-2mm |
Sisanra | 500um + /-5mm 1000um + /-5mm | 500um + /-20mm 350um + /-20mm |
TTV | ≤ 10um | ≤ 10um |
Curie otutu | 605°C +/- 0.7°C (Ọna DTA) | 605 °C + / -3 °C (Ọna DTA |
Didara oju | Didan-apa meji | Didan-apa meji |
Chamfered egbegbe | iyipo eti | iyipo eti |
Awọn abuda bọtini
1.Electrical ati Optical Performance
· Electro-Optic olùsọdipúpọ: r33 Gigun 30 pm/V (X-ge), 1.5× ti o ga ju LiNbO3, muu ultra-wideband elekitiro-opiti awose (> 40 GHz bandiwidi).
· Idahun Spectral Broad: Iwọn gbigbe 0.4-5.0 μm (sisanra 8 mm), pẹlu eti gbigba ultraviolet bi kekere bi 280 nm, o dara fun awọn lasers UV ati awọn ohun elo dot kuatomu.
Olùsọdipúpọ̀ Pyroelectric Kekere: dP/dT = 3.5×10⁻ C/(m²·K), aridaju iduroṣinṣin ninu awọn sensọ infurarẹẹdi iwọn otutu giga.
2.Thermal ati Mechanical Properties
· Imudara Ooru Giga: 4.6 W / m · K (X-ge), quadruple ti quartz, imuduro -200-500 ° C gigun kẹkẹ gbona.
· Imugboroosi Gbona Kekere: CTE = 4.1×10⁻⁶/K (25–1000°C), ni ibamu pẹlu apoti ohun alumọni lati dinku wahala igbona.
3.Alabawọn Iṣakoso ati Processing konge
· Ìwúwo Micropipe: <0.1 cm⁻² (awọn afárá 8-inch), iwuwo yiyọ kuro <500 cm⁻² (ti ṣe idaniloju nipasẹ KOH etching).
· Didara oju: CMP-didan si Ra <0.5 nm, pade EUV lithography-grade flatness awọn ibeere.
Awọn ohun elo bọtini
Ibugbe | Awọn oju iṣẹlẹ ohun elo | Awọn anfani Imọ-ẹrọ |
Awọn ibaraẹnisọrọ Optical | 100G/400G DWDM lesa, silikoni photonics arabara modulu | LiTaO3 wafer ká gbooro julọ.Oniranran gbigbe ati kekere waveguide pipadanu (α <0.1 dB/cm) jeki C-band imugboroosi. |
Awọn ibaraẹnisọrọ 5G/6G | Awọn asẹ SAW (1.8-3.5 GHz), awọn asẹ BAW-SMR | 42°Y-ge wafers ṣaṣeyọri Kt²> 15%, jiṣẹ pipadanu ifibọ kekere (<1.5 dB) ati yiyọ-pipa giga (> 30 dB). |
Awọn imọ-ẹrọ kuatomu | Awọn aṣawari fọto ẹyọkan, awọn orisun iyipada-isalẹ parametric | Olùsọdipúpọ̀ aláìlẹ́gbẹ́ tó ga (χ(2)=40 pm/V) àti ìwọ̀n ìwọ̀n ìkà òkùnkùn kékeré (<100 counts/s) mú ìdúróṣinṣin kété. |
Imọye ile-iṣẹ | Awọn sensọ titẹ iwọn otutu giga, awọn oluyipada lọwọlọwọ | Idahun piezoelectric LiTaO3 wafer (g33>20 mV/m) ati ifarada iwọn otutu to gaju (> 400°C) baamu awọn agbegbe to gaju. |
Awọn iṣẹ XKH
1.Custom Wafer Fabrication
· Iwọn ati Ige: 2-8-inch wafers pẹlu X / Y / Z-ge, 42 ° Y-ge, ati aṣa angular gige (± 0.01 ° ifarada).
· Iṣakoso Doping: Fe, Mg doping nipasẹ ọna Czochralski (iwọn ifọkansi 10¹⁶–10¹⁹ cm⁻³) lati jẹ ki awọn iye elekitiro-opiki ati iduroṣinṣin gbona.
2.To ti ni ilọsiwaju Ilana Awọn ọna ẹrọ
o
· Poling igbakọọkan (PPLT): Imọ-ẹrọ Smart-Cut fun awọn wafers LTOI, ṣiṣe iyọrisi akoko akoko agbegbe ± 10 nm ati iyipada ipo-ipele ti o baamu (QPM).
· Integration orisirisi: Si-orisun LiTaO3 composite wafers (POI) pẹlu sisanra iṣakoso (300-600 nm) ati ki o gbona elekitiriki soke si 8.78 W / m · K fun ga-igbohunsafẹfẹ SAW Ajọ.
3.Quality Management Systems
o
Idanwo Ipari-si-Ipari: Raman spectroscopy (ijẹrisi polytype), XRD (crystallinity), AFM (morphology morphology), ati idanwo iṣọkan oju-ara (Δn <5 × 10⁻).
4.Global Supply Chain Support
o
· Agbara iṣelọpọ: Ijade oṣooṣu> 5,000 wafers (8-inch: 70%), pẹlu ifijiṣẹ pajawiri 48-wakati.
· Nẹtiwọọki Awọn eekaderi: Ibora ni Yuroopu, Ariwa America, ati Asia-Pacific nipasẹ ẹru afẹfẹ / okun pẹlu iṣakojọpọ iṣakoso iwọn otutu.


