LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Sisanra 250-500um

Apejuwe kukuru:

Awọn wafers LiTaO₃ ṣe aṣoju piezoelectric to ṣe pataki ati eto ohun elo ferroelectric, ti n ṣafihan awọn iye iwọn piezoelectric ti o yatọ, iduroṣinṣin gbona, ati awọn ohun-ini opiti, ṣiṣe wọn ṣe pataki fun awọn asẹ igbi akositiki dada (SAW), awọn olutẹtisi igbi acoustic (BAW) olopobobo, awọn oluyipada opiti, ati awọn aṣawari infurarẹẹdi. XKH ṣe amọja ni LiTaO₃ wafer R&D ti o ni agbara giga ati iṣelọpọ, lilo idagbasoke Czochralski (CZ) ti ilọsiwaju garawa ati awọn ilana epitaxy alakoso omi (LPE) lati rii daju isọdọkan crystalline ti o ga julọ pẹlu awọn iwuwo abawọn <100/cm².

XKH ipese 3-inch, 4-inch, ati 6-inch LiTaO₃ wafers pẹlu ọpọlọpọ awọn itọnisọna crystallographic (X-cut, Y-cut, Z-cut), atilẹyin doping ti adani (Mg, Zn) ati awọn itọju idibo lati pade awọn ibeere ohun elo kan pato. Awọn ohun elo dielectric ibakan (ε ~ 40-50), piezoelectric olùsọdipúpọ (d₃₃ ~ 8-10 pC/N), ati Curie otutu (~600°C) fi idi LiTaO₃ bi awọn afihan sobusitireti fun ga-igbohunsafẹfẹ Ajọ ati konge sensosi.

iṣelọpọ iṣọpọ inaro wa ni wiwa idagbasoke gara, wafering, didan, ati ifisilẹ fiimu tinrin, pẹlu agbara iṣelọpọ oṣooṣu ti o kọja awọn wafers 3,000 lati ṣe iranṣẹ awọn ibaraẹnisọrọ 5G, ẹrọ itanna olumulo, awọn fọto, ati awọn ile-iṣẹ aabo. A pese ijumọsọrọ imọ-ẹrọ okeerẹ, isọdi apẹẹrẹ, ati awọn iṣẹ afọwọṣe iwọn kekere lati fi awọn solusan LiTaO₃ iṣapeye jiṣẹ.

Fi imeeli ranṣẹ si wa

Awọn ẹya ara ẹrọ

Imọ paramita

Oruko	Optical-ite LiTaO3	Ohun tabili ipele LiTaO3
Axial	Z ge + / - 0,2 °	36 ° Y gige / 42 ° Y gige / X ge(+ / - 0.2 °)
Iwọn opin	76.2mm + / - 0.3mm/100 ± 0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150± 0.5mm
Datum ofurufu	22mm + / - 2mm	22mm + /-2mm32mm + /-2mm
Sisanra	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Curie otutu	605°C +/- 0.7°C (Ọna DTA)	605 °C + / -3 °C (Ọna DTA
Didara oju	Didan-apa meji	Didan-apa meji
Chamfered egbegbe	iyipo eti	iyipo eti

Awọn abuda bọtini

1.Crystal Structure ati Electrical Performance

· Iduroṣinṣin Crystallographic: 100% 4H-SiC polytype dominance, odo multicrystalline inclusions (fun apẹẹrẹ, 6H/15R), pẹlu XRD rocking curve full-iwọn ni idaji-o pọju (FWHM) ≤32.7 arcsec.
· Gbigbe Gbigbe Giga: Irin-ajo elekitironi ti 5,400 cm²/V·s (4H-SiC) ati iṣipopada iho ti 380 cm²/V·s, ti n mu awọn apẹrẹ ẹrọ igbohunsafẹfẹ-giga ṣiṣẹ.
· Lile Radiation: Diduro itanna neutroni 1 MeV pẹlu iloro ibajẹ nipo ti 1×10¹⁵ n/cm², o dara julọ fun aaye afẹfẹ ati awọn ohun elo iparun.

2.Thermal ati Mechanical Properties

· Imudara Gbona Iyatọ: 4.9 W/cm · K (4H-SiC), ilọpo mẹta ti ohun alumọni, iṣẹ atilẹyin loke 200°C.
· Imudara Imugboroosi Gbona Kekere: CTE ti 4.0 × 10⁻⁶/K (25–1000°C), ni idaniloju ibamu pẹlu apoti ti o da lori ohun alumọni ati idinku wahala igbona.

3.Defect Iṣakoso ati Processing konge
o
· Ìwúwo Micropipe: <0.3 cm⁻² (awọn abọ 8-inch), iwuwo yiyọ kuro <1,000 cm⁻² (jẹrisi nipasẹ KOH etching).
Didara oju: CMP-didan si Ra <0.2 nm, pade EUV lithography-grade flatness awọn ibeere.

Awọn ohun elo bọtini

Ibugbe	Awọn oju iṣẹlẹ ohun elo	Awọn anfani Imọ-ẹrọ
Awọn ibaraẹnisọrọ Optical	100G/400G lesa, ohun alumọni photonics arabara modulu	Awọn sobusitireti irugbin InP jẹ ki bandgap taara (1.34 eV) ati heteroepitaxy ti o da lori Si, idinku pipadanu isọpọ opiti.
Awọn ọkọ Agbara Tuntun	Awọn oluyipada foliteji giga 800V, awọn ṣaja inu ọkọ (OBC)	Awọn sobusitireti 4H-SiC duro> 1,200 V, idinku awọn adanu idari nipasẹ 50% ati iwọn eto nipasẹ 40%.
Awọn ibaraẹnisọrọ 5G	Milimita-igbi RF awọn ẹrọ (PA/LNA), ipilẹ agbara amplifiers	Awọn sobusitireti SiC ologbele-idabobo (resistivity> 10⁵ Ω·cm) jẹ ki irẹpọ-igbohunsafẹfẹ giga (60 GHz+) isọpọ palolo.
Awọn ohun elo ile-iṣẹ	Awọn sensọ iwọn otutu giga, awọn oluyipada lọwọlọwọ, awọn diigi riakito iparun	Awọn sobusitireti irugbin InSb (0.17 eV bandgap) ṣafihan ifamọ oofa to 300%@10 T.

LiTaO₃ Wafers - Awọn abuda bọtini

1. Superior Piezoelectric Performance

· Awọn iye iwọn piezoelectric giga (d₃₃ ~ 8-10 pC/N, K² ~ 0.5%) jẹ ki awọn ẹrọ SAW/BAW igbohunsafẹfẹ giga-giga pẹlu pipadanu ifibọ <1.5dB fun awọn asẹ 5G RF

Isopọpọ eletiriki eletiriki ti o dara julọ ṣe atilẹyin bandiwidi jakejado (≥5%) awọn apẹrẹ àlẹmọ fun awọn ohun elo sub-6GHz ati mmWave

2. Optical Properties

· Iṣalaye igbohunsafefe (> 70% gbigbe lati 400-5000nm) fun awọn oluyipada elekitiro-opiti ti o ṣaṣeyọri> bandiwidi 40GHz

· Ailagbara opitika alailagbara (χ⁽²⁾ ~ 30 irọlẹ/V) n ṣe irandiran iran ibaramu keji daradara (SHG) ni awọn eto ina lesa

3. Iduroṣinṣin Ayika

Iwọn otutu Curie giga (600°C) ṣe itọju idahun piezoelectric ni awọn agbegbe adaṣe-ọkọ ayọkẹlẹ (-40°C si 150°C)

· Kemikali inertness lodi si acids/alkalies (pH1-13) ṣe idaniloju igbẹkẹle ninu awọn ohun elo sensọ ile-iṣẹ

4. Awọn agbara isọdi

· Imọ-ẹrọ Iṣalaye: X-ge (51°), Y-ge (0°), ge-Z (36°) fun awọn idahun piezoelectric ti a ṣe deede

· Awọn aṣayan doping: Mg-doped (resistance ibaje opitika), Zn-doped (imudara d₃₃)

Idoju ti pari: didan ti o ti ṣetan Epitaxial (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Awọn ohun elo akọkọ

1. RF Front-Opin modulu

· 5G NR SAW Ajọ (Band n77/n79) pẹlu iwọn otutu olùsọdipúpọ ti igbohunsafẹfẹ (TCF) <|-15ppm/°C|

Awọn atuntẹ BAW jakejado jakejado fun WiFi 6E/7 (5.925-7.125GHz)

2. Ese Photonics

Awọn oluyipada Mach-Zehnder iyara to gaju (> 100Gbps) fun awọn ibaraẹnisọrọ opiti isokan

Awọn aṣawari infurarẹẹdi QWIP pẹlu awọn gigun gigun gige gige lati 3-14μm

3. Automotive Electronics

· Ultrasonic pa sensosi pẹlu> 200kHz išẹ igbohunsafẹfẹ

Awọn oluyipada piezoelectric TPMS ti o ye -40°C si 125°C gigun kẹkẹ igbona

4. olugbeja Systems

· Ajọ olugba EW pẹlu> 60dB ijusile ti iye

· Misaili oluwadi IR windows gbigbe 3-5μm MWIR Ìtọjú

5. Nyoju Technologies

· Optomechanical kuatomu transducers fun makirowefu-si-opitika iyipada

Awọn eto PMUT fun aworan olutirasandi iṣoogun (> ipinnu 20MHz)

LiTaO₃ Wafers - Awọn iṣẹ XKH

1. Ipese pq Management

· Ṣiṣẹ Boule-to-wafer pẹlu akoko idari ọsẹ 4 fun awọn pato boṣewa

· Iṣapeye iṣelọpọ idiyele idiyele 10-15% anfani idiyele dipo awọn oludije

2. Aṣa Solutions

· Wafering-pato Iṣalaye: 36°±0.5° Y-ge fun iṣẹ SAW ti o dara julọ

· Awọn akopọ doped: MgO (5mol%) doping fun awọn ohun elo opitika

Awọn iṣẹ Metallization: Cr/Au (100/1000Å) apẹrẹ elekiturodu

3. Imọ Support

· Isọdi ohun elo: Awọn iha gbigbọn XRD (FWHM <0.01°), itupalẹ oju AFM

· Simulation Device: FEM modeli fun SAW àlẹmọ oniru ti o dara ju

Ipari

LiTaO₃ wafers tẹsiwaju lati jeki awọn ilọsiwaju imọ-ẹrọ kọja awọn ibaraẹnisọrọ RF, awọn fọto ti a ṣepọ, ati awọn sensọ ayika-lile. Imọye ohun elo XKH, iṣedede iṣelọpọ, ati atilẹyin imọ-ẹrọ ohun elo ṣe iranlọwọ fun awọn alabara lati bori awọn italaya apẹrẹ ni awọn eto itanna iran atẹle.